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NTD18N06LT4G - 

NTD18N06LT4G N-channel MOSFET Transistor, 18 A, 60 V, 3-Pin DPAK

ON Semiconductor NTD18N06LT4G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTD18N06LT4G
仓库库存编号:
70275456
技术数据表:
View NTD18N06LT4G Datasheet Datasheet
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由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTD18N06LT4G产品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  482 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  18 A  
  Dimensions  6.73 x 6.22 x 2.25 mm  
  Height  0.089" (2.25mm)  
  Length  0.264" (6.73mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  DPAK  
  Power Dissipation  55 W  
  Resistance, Drain to Source On  65 mΩ  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +175 °C  
  Time, Turn-Off Delay  19 ns  
  Time, Turn-On Delay  9.9 ns  
  Transconductance, Forward  13.5 sec  
  Typical Gate Charge @ Vgs  11 nC @ 5 V  
  Voltage, Drain to Source  60 V  
  Voltage, Forward, Diode  1.15 V  
  Voltage, Gate to Source  ±15 V  
  Width  0.245" (6.22mm)  
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NTD18N06LT4G相关搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 482 pF @ 25 V  ON Semiconductor Capacitance, Input 482 pF @ 25 V  MOSFET Transistors Capacitance, Input 482 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 482 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 18 A  ON Semiconductor Current, Drain 18 A  MOSFET Transistors Current, Drain 18 A  ON Semiconductor MOSFET Transistors Current, Drain 18 A   Dimensions 6.73 x 6.22 x 2.25 mm  ON Semiconductor Dimensions 6.73 x 6.22 x 2.25 mm  MOSFET Transistors Dimensions 6.73 x 6.22 x 2.25 mm  ON Semiconductor MOSFET Transistors Dimensions 6.73 x 6.22 x 2.25 mm   Height 0.089" (2.25mm)  ON Semiconductor Height 0.089" (2.25mm)  MOSFET Transistors Height 0.089" (2.25mm)  ON Semiconductor MOSFET Transistors Height 0.089" (2.25mm)   Length 0.264" (6.73mm)  ON Semiconductor Length 0.264" (6.73mm)  MOSFET Transistors Length 0.264" (6.73mm)  ON Semiconductor MOSFET Transistors Length 0.264" (6.73mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type DPAK  ON Semiconductor Package Type DPAK  MOSFET Transistors Package Type DPAK  ON Semiconductor MOSFET Transistors Package Type DPAK   Power Dissipation 55 W  ON Semiconductor Power Dissipation 55 W  MOSFET Transistors Power Dissipation 55 W  ON Semiconductor MOSFET Transistors Power Dissipation 55 W   Resistance, Drain to Source On 65 mΩ  ON Semiconductor Resistance, Drain to Source On 65 mΩ  MOSFET Transistors Resistance, Drain to Source On 65 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 65 mΩ   Temperature, Operating, Maximum +175 °C  ON Semiconductor Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  ON Semiconductor Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 19 ns  ON Semiconductor Time, Turn-Off Delay 19 ns  MOSFET Transistors Time, Turn-Off Delay 19 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 19 ns   Time, Turn-On Delay 9.9 ns  ON Semiconductor Time, Turn-On Delay 9.9 ns  MOSFET Transistors Time, Turn-On Delay 9.9 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 9.9 ns   Transconductance, Forward 13.5 sec  ON Semiconductor Transconductance, Forward 13.5 sec  MOSFET Transistors Transconductance, Forward 13.5 sec  ON Semiconductor MOSFET Transistors Transconductance, Forward 13.5 sec   Typical Gate Charge @ Vgs 11 nC @ 5 V  ON Semiconductor Typical Gate Charge @ Vgs 11 nC @ 5 V  MOSFET Transistors Typical Gate Charge @ Vgs 11 nC @ 5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 11 nC @ 5 V   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.15 V  ON Semiconductor Voltage, Forward, Diode 1.15 V  MOSFET Transistors Voltage, Forward, Diode 1.15 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.15 V   Voltage, Gate to Source ±15 V  ON Semiconductor Voltage, Gate to Source ±15 V  MOSFET Transistors Voltage, Gate to Source ±15 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±15 V   Width 0.245" (6.22mm)  ON Semiconductor Width 0.245" (6.22mm)  MOSFET Transistors Width 0.245" (6.22mm)  ON Semiconductor MOSFET Transistors Width 0.245" (6.22mm)  
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