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NTF3055L108T1G - 

MOSFET, Power; N-Ch; VDSS 68VDC; RDS(ON) 92 Milliohms; ID 3A; SOT-223 (TO-261); -55deg

ON Semiconductor NTF3055L108T1G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTF3055L108T1G
仓库库存编号:
70100697
技术数据表:
View NTF3055L108T1G Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTF3055L108T1G产品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  313 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  3 A  
  Dimensions  6.7 x 3.7 x 1.65 mm  
  Gate Charge, Total  7.6 nC  
  Length  0.263" (6.7mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3+Tab  
  Package Type  SOT-223  
  Polarization  N-Channel  
  Power Dissipation  2.1 W  
  Resistance, Drain to Source On  92 Milliohms  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +175 °C  
  Time, Turn-Off Delay  22 ns  
  Time, Turn-On Delay  11 ns  
  Transconductance, Forward  5.7 S  
  Typical Gate Charge @ Vgs  7.6 nC @ 5 V  
  Voltage, Breakdown, Drain to Source  68 V  
  Voltage, Drain to Source  60 V  
  Voltage, Forward, Diode  0.87 V  
  Voltage, Gate to Source  ±15 VDC  
  Width  0.146" (3.7mm)  
关键词         

NTF3055L108T1G相关搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 313 pF @ 25 V  ON Semiconductor Capacitance, Input 313 pF @ 25 V  MOSFET Transistors Capacitance, Input 313 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 313 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 3 A  ON Semiconductor Current, Drain 3 A  MOSFET Transistors Current, Drain 3 A  ON Semiconductor MOSFET Transistors Current, Drain 3 A   Dimensions 6.7 x 3.7 x 1.65 mm  ON Semiconductor Dimensions 6.7 x 3.7 x 1.65 mm  MOSFET Transistors Dimensions 6.7 x 3.7 x 1.65 mm  ON Semiconductor MOSFET Transistors Dimensions 6.7 x 3.7 x 1.65 mm   Gate Charge, Total 7.6 nC  ON Semiconductor Gate Charge, Total 7.6 nC  MOSFET Transistors Gate Charge, Total 7.6 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 7.6 nC   Length 0.263" (6.7mm)  ON Semiconductor Length 0.263" (6.7mm)  MOSFET Transistors Length 0.263" (6.7mm)  ON Semiconductor MOSFET Transistors Length 0.263" (6.7mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3+Tab  ON Semiconductor Number of Pins 3+Tab  MOSFET Transistors Number of Pins 3+Tab  ON Semiconductor MOSFET Transistors Number of Pins 3+Tab   Package Type SOT-223  ON Semiconductor Package Type SOT-223  MOSFET Transistors Package Type SOT-223  ON Semiconductor MOSFET Transistors Package Type SOT-223   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 2.1 W  ON Semiconductor Power Dissipation 2.1 W  MOSFET Transistors Power Dissipation 2.1 W  ON Semiconductor MOSFET Transistors Power Dissipation 2.1 W   Resistance, Drain to Source On 92 Milliohms  ON Semiconductor Resistance, Drain to Source On 92 Milliohms  MOSFET Transistors Resistance, Drain to Source On 92 Milliohms  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 92 Milliohms   Temperature, Operating, Maximum +175 °C  ON Semiconductor Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  ON Semiconductor Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 22 ns  ON Semiconductor Time, Turn-Off Delay 22 ns  MOSFET Transistors Time, Turn-Off Delay 22 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 22 ns   Time, Turn-On Delay 11 ns  ON Semiconductor Time, Turn-On Delay 11 ns  MOSFET Transistors Time, Turn-On Delay 11 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 11 ns   Transconductance, Forward 5.7 S  ON Semiconductor Transconductance, Forward 5.7 S  MOSFET Transistors Transconductance, Forward 5.7 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 5.7 S   Typical Gate Charge @ Vgs 7.6 nC @ 5 V  ON Semiconductor Typical Gate Charge @ Vgs 7.6 nC @ 5 V  MOSFET Transistors Typical Gate Charge @ Vgs 7.6 nC @ 5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 7.6 nC @ 5 V   Voltage, Breakdown, Drain to Source 68 V  ON Semiconductor Voltage, Breakdown, Drain to Source 68 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 68 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 68 V   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 0.87 V  ON Semiconductor Voltage, Forward, Diode 0.87 V  MOSFET Transistors Voltage, Forward, Diode 0.87 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.87 V   Voltage, Gate to Source ±15 VDC  ON Semiconductor Voltage, Gate to Source ±15 VDC  MOSFET Transistors Voltage, Gate to Source ±15 VDC  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±15 VDC   Width 0.146" (3.7mm)  ON Semiconductor Width 0.146" (3.7mm)  MOSFET Transistors Width 0.146" (3.7mm)  ON Semiconductor MOSFET Transistors Width 0.146" (3.7mm)  
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