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NTJS4405NT1G - 

MOSFET; Single N-Ch; VDSS 25V; RDS(ON) 249Milliohms; ID 1.2A; SC-88/SOT-363; PD 0.63W

ON Semiconductor NTJS4405NT1G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTJS4405NT1G
仓库库存编号:
70100704
技术数据表:
View NTJS4405NT1G Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTJS4405NT1G产品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  49 pF @ 10 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Quad Drain  
  Current, Drain  1.2 A  
  Dimensions  2.2 x 1.35 x 1 mm  
  Gate Charge, Total  0.75 nC  
  Height  0.039" (1mm)  
  Length  0.086" (2.2mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  6  
  Package Type  SC-88  
  Polarization  N-Channel  
  Power Dissipation  0.63 W  
  Resistance, Drain to Source On  400 mΩ  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  25 ns  
  Time, Turn-On Delay  6 ns  
  Transconductance, Forward  0.5 S  
  Typical Gate Charge @ Vgs  0.75 nC @ 4.5 V  
  Voltage, Breakdown, Drain to Source  25 V  
  Voltage, Drain to Source  25 V  
  Voltage, Forward, Diode  0.82 V  
  Voltage, Gate to Source  ±8 V  
  Width  0.053" (1.35mm)  
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NTJS4405NT1G相关搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 49 pF @ 10 V  ON Semiconductor Capacitance, Input 49 pF @ 10 V  MOSFET Transistors Capacitance, Input 49 pF @ 10 V  ON Semiconductor MOSFET Transistors Capacitance, Input 49 pF @ 10 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Quad Drain  ON Semiconductor Configuration Quad Drain  MOSFET Transistors Configuration Quad Drain  ON Semiconductor MOSFET Transistors Configuration Quad Drain   Current, Drain 1.2 A  ON Semiconductor Current, Drain 1.2 A  MOSFET Transistors Current, Drain 1.2 A  ON Semiconductor MOSFET Transistors Current, Drain 1.2 A   Dimensions 2.2 x 1.35 x 1 mm  ON Semiconductor Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  ON Semiconductor MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Gate Charge, Total 0.75 nC  ON Semiconductor Gate Charge, Total 0.75 nC  MOSFET Transistors Gate Charge, Total 0.75 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 0.75 nC   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  ON Semiconductor MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  ON Semiconductor Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  ON Semiconductor MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 6  ON Semiconductor Number of Pins 6  MOSFET Transistors Number of Pins 6  ON Semiconductor MOSFET Transistors Number of Pins 6   Package Type SC-88  ON Semiconductor Package Type SC-88  MOSFET Transistors Package Type SC-88  ON Semiconductor MOSFET Transistors Package Type SC-88   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 0.63 W  ON Semiconductor Power Dissipation 0.63 W  MOSFET Transistors Power Dissipation 0.63 W  ON Semiconductor MOSFET Transistors Power Dissipation 0.63 W   Resistance, Drain to Source On 400 mΩ  ON Semiconductor Resistance, Drain to Source On 400 mΩ  MOSFET Transistors Resistance, Drain to Source On 400 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 400 mΩ   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 25 ns  ON Semiconductor Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 6 ns  ON Semiconductor Time, Turn-On Delay 6 ns  MOSFET Transistors Time, Turn-On Delay 6 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 6 ns   Transconductance, Forward 0.5 S  ON Semiconductor Transconductance, Forward 0.5 S  MOSFET Transistors Transconductance, Forward 0.5 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 0.5 S   Typical Gate Charge @ Vgs 0.75 nC @ 4.5 V  ON Semiconductor Typical Gate Charge @ Vgs 0.75 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 0.75 nC @ 4.5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 0.75 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 25 V  ON Semiconductor Voltage, Breakdown, Drain to Source 25 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 25 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 25 V   Voltage, Drain to Source 25 V  ON Semiconductor Voltage, Drain to Source 25 V  MOSFET Transistors Voltage, Drain to Source 25 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 25 V   Voltage, Forward, Diode 0.82 V  ON Semiconductor Voltage, Forward, Diode 0.82 V  MOSFET Transistors Voltage, Forward, Diode 0.82 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.82 V   Voltage, Gate to Source ±8 V  ON Semiconductor Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.053" (1.35mm)  ON Semiconductor Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  ON Semiconductor MOSFET Transistors Width 0.053" (1.35mm)  
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