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Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI10 Series
Capacitance, Input	30 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	330 mA
Dimensions	1.68 x 0.86 x 0.8 mm
Gate Charge, Total	0.6 pC
Height	0.031" (0.8mm)
Length	0.066" (1.68mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	–55 to +150 °C
Package Type	SC-75A
Polarization	N-Channel
Power Dissipation	250 mW
Resistance, Drain to Source On	5 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	35 ns
Time, Turn-On Delay	25 ns
Transconductance, Forward	0.1 S
Typical Gate Charge @ Vgs	Maximum of 0.6 nC @ 10 V
Voltage, Breakdown, Drain to Source	60 V
Voltage, Drain to Source	60 V
Voltage, Forward, Diode	1.3 V
Voltage, Gate to Source	±20 V
Width	0.034" (0.86mm)
关键词

Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Capacitance, Input 30 pF @ 25 V  Siliconix / Vishay Capacitance, Input 30 pF @ 25 V  MOSFET Transistors Capacitance, Input 30 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 30 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 330 mA  Siliconix / Vishay Current, Drain 330 mA  MOSFET Transistors Current, Drain 330 mA  Siliconix / Vishay MOSFET Transistors Current, Drain 330 mA   Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay Dimensions 1.68 x 0.86 x 0.8 mm  MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm   Gate Charge, Total 0.6 pC  Siliconix / Vishay Gate Charge, Total 0.6 pC  MOSFET Transistors Gate Charge, Total 0.6 pC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 0.6 pC   Height 0.031" (0.8mm)  Siliconix / Vishay Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  Siliconix / Vishay MOSFET Transistors Height 0.031" (0.8mm)   Length 0.066" (1.68mm)  Siliconix / Vishay Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  Siliconix / Vishay MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +150 °C  MOSFET Transistors Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +150 °C   Package Type SC-75A  Siliconix / Vishay Package Type SC-75A  MOSFET Transistors Package Type SC-75A  Siliconix / Vishay MOSFET Transistors Package Type SC-75A   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 250 mW  Siliconix / Vishay Power Dissipation 250 mW  MOSFET Transistors Power Dissipation 250 mW  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 mW   Resistance, Drain to Source On 5 Ω  Siliconix / Vishay Resistance, Drain to Source On 5 Ω  MOSFET Transistors Resistance, Drain to Source On 5 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 5 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 35 ns  Siliconix / Vishay Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 25 ns  Siliconix / Vishay Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 0.1 S  Siliconix / Vishay Transconductance, Forward 0.1 S  MOSFET Transistors Transconductance, Forward 0.1 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.1 S   Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  Siliconix / Vishay Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.3 V  Siliconix / Vishay Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.034" (0.86mm)  Siliconix / Vishay Width 0.034" (0.86mm)  MOSFET Transistors Width 0.034" (0.86mm)  Siliconix / Vishay MOSFET Transistors Width 0.034" (0.86mm)