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Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI10 Series
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	200 mA
Dimensions	1.7 x 0.95 x 0.8 mm
Gate Charge, Total	330 pC
Height	0.031" (0.8mm)
Length	0.066" (1.68mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	–55 TO +150 °C
Package Type	SC-75A, SC-89
Polarization	N-Channel
Power Dissipation	300 mW
Resistance, Drain to Source On	10 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	Maximum of 50 ns
Time, Turn-On Delay	Maximum of 50 ns
Transconductance, Forward	0.5 S
Typical Gate Charge @ Vgs	750 nC @ 4.5 V
Voltage, Breakdown, Drain to Source	20 V
Voltage, Drain to Source	20 V
Voltage, Forward, Diode	1.2 V
Voltage, Gate to Source	±6 V
Width	0.037" (0.95mm)
关键词

Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 200 mA  Siliconix / Vishay Current, Drain 200 mA  MOSFET Transistors Current, Drain 200 mA  Siliconix / Vishay MOSFET Transistors Current, Drain 200 mA   Dimensions 1.7 x 0.95 x 0.8 mm  Siliconix / Vishay Dimensions 1.7 x 0.95 x 0.8 mm  MOSFET Transistors Dimensions 1.7 x 0.95 x 0.8 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.7 x 0.95 x 0.8 mm   Gate Charge, Total 330 pC  Siliconix / Vishay Gate Charge, Total 330 pC  MOSFET Transistors Gate Charge, Total 330 pC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 330 pC   Height 0.031" (0.8mm)  Siliconix / Vishay Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  Siliconix / Vishay MOSFET Transistors Height 0.031" (0.8mm)   Length 0.066" (1.68mm)  Siliconix / Vishay Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  Siliconix / Vishay MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature –55 TO +150 °C  Siliconix / Vishay Operating and Storage Temperature –55 TO +150 °C  MOSFET Transistors Operating and Storage Temperature –55 TO +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 TO +150 °C   Package Type SC-75A, SC-89  Siliconix / Vishay Package Type SC-75A, SC-89  MOSFET Transistors Package Type SC-75A, SC-89  Siliconix / Vishay MOSFET Transistors Package Type SC-75A, SC-89   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 300 mW  Siliconix / Vishay Power Dissipation 300 mW  MOSFET Transistors Power Dissipation 300 mW  Siliconix / Vishay MOSFET Transistors Power Dissipation 300 mW   Resistance, Drain to Source On 10 Ω  Siliconix / Vishay Resistance, Drain to Source On 10 Ω  MOSFET Transistors Resistance, Drain to Source On 10 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 10 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay Maximum of 50 ns  Siliconix / Vishay Time, Turn-Off Delay Maximum of 50 ns  MOSFET Transistors Time, Turn-Off Delay Maximum of 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay Maximum of 50 ns   Time, Turn-On Delay Maximum of 50 ns  Siliconix / Vishay Time, Turn-On Delay Maximum of 50 ns  MOSFET Transistors Time, Turn-On Delay Maximum of 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay Maximum of 50 ns   Transconductance, Forward 0.5 S  Siliconix / Vishay Transconductance, Forward 0.5 S  MOSFET Transistors Transconductance, Forward 0.5 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.5 S   Typical Gate Charge @ Vgs 750 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 750 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 750 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 750 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±6 V  Siliconix / Vishay Voltage, Gate to Source ±6 V  MOSFET Transistors Voltage, Gate to Source ±6 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±6 V   Width 0.037" (0.95mm)  Siliconix / Vishay Width 0.037" (0.95mm)  MOSFET Transistors Width 0.037" (0.95mm)  Siliconix / Vishay MOSFET Transistors Width 0.037" (0.95mm)