关于我们 | 联系我们

库存查询

Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI15 Series
Channel Mode	Enhancement
Channel Type	N, P
Configuration	Single
Current, Drain	-0.41 (P), ±0.66 (N) A
Dimensions	2.2 x 1.35 x 1 mm
Height	0.039" (1mm)
Length	0.086" (2.2mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	6
Package Type	SOT-363
Power Dissipation	0.27 W
Resistance, Drain to Source On	0.63 (N), 1.2 (P) Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	10 (N), 10 (P) ns
Time, Turn-On Delay	10 (N), 6 (P) ns
Transconductance, Forward	1.2 (P), 1.5 (N) S
Typical Gate Charge @ Vgs	0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)
Voltage, Drain to Source	-8 (P), 20 (N) V
Voltage, Forward, Diode	-1.2 (P), 1.2 (N) V
Voltage, Gate to Source	±12 (N), ±8 (P) V
Width	0.053" (1.35mm)
关键词

Brand/Series SI15 Series  Siliconix / Vishay Brand/Series SI15 Series  MOSFET Transistors Brand/Series SI15 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI15 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -0.41 (P), ±0.66 (N) A  Siliconix / Vishay Current, Drain -0.41 (P), ±0.66 (N) A  MOSFET Transistors Current, Drain -0.41 (P), ±0.66 (N) A  Siliconix / Vishay MOSFET Transistors Current, Drain -0.41 (P), ±0.66 (N) A   Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  Siliconix / Vishay Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  Siliconix / Vishay MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type SOT-363  Siliconix / Vishay Package Type SOT-363  MOSFET Transistors Package Type SOT-363  Siliconix / Vishay MOSFET Transistors Package Type SOT-363   Power Dissipation 0.27 W  Siliconix / Vishay Power Dissipation 0.27 W  MOSFET Transistors Power Dissipation 0.27 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.27 W   Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω  Siliconix / Vishay Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 10 (N), 10 (P) ns  Siliconix / Vishay Time, Turn-Off Delay 10 (N), 10 (P) ns  MOSFET Transistors Time, Turn-Off Delay 10 (N), 10 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 10 (N), 10 (P) ns   Time, Turn-On Delay 10 (N), 6 (P) ns  Siliconix / Vishay Time, Turn-On Delay 10 (N), 6 (P) ns  MOSFET Transistors Time, Turn-On Delay 10 (N), 6 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10 (N), 6 (P) ns   Transconductance, Forward 1.2 (P), 1.5 (N) S  Siliconix / Vishay Transconductance, Forward 1.2 (P), 1.5 (N) S  MOSFET Transistors Transconductance, Forward 1.2 (P), 1.5 (N) S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 1.2 (P), 1.5 (N) S   Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)  Siliconix / Vishay Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)  MOSFET Transistors Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)   Voltage, Drain to Source -8 (P), 20 (N) V  Siliconix / Vishay Voltage, Drain to Source -8 (P), 20 (N) V  MOSFET Transistors Voltage, Drain to Source -8 (P), 20 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -8 (P), 20 (N) V   Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  Siliconix / Vishay Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V   Voltage, Gate to Source ±12 (N), ±8 (P) V  Siliconix / Vishay Voltage, Gate to Source ±12 (N), ±8 (P) V  MOSFET Transistors Voltage, Gate to Source ±12 (N), ±8 (P) V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 (N), ±8 (P) V   Width 0.053" (1.35mm)  Siliconix / Vishay Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  Siliconix / Vishay MOSFET Transistors Width 0.053" (1.35mm)