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Features:

Halogen-free Option Available

Brand/Series	SI23 Series
Channel Type	N
Current, Drain	2.1 A
Fall Time	25 ns
Gate Charge, Total	4 nC
Operating and Storage Temperature	–55 to +150 °C
Package Type	TO-236 (SOT-23)
Polarization	N-Channel
Power Dissipation	0.7 W
Resistance, Drain to Source On	0.045 Ohm
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Thermal Resistance, Junction to Ambient	140 °C/W
Time, Rise	80 ns
Time, Turn-Off Delay	16 ns
Time, Turn-On Delay	7 ns
Transconductance, Forward	8 S
Voltage, Breakdown, Drain to Source	20 V
Voltage, Drain to Source	20 V
Voltage, Forward, Diode	0.76 V
Voltage, Gate to Source	±8 V
关键词

Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 2.1 A  Siliconix / Vishay Current, Drain 2.1 A  MOSFET Transistors Current, Drain 2.1 A  Siliconix / Vishay MOSFET Transistors Current, Drain 2.1 A   Fall Time 25 ns  Siliconix / Vishay Fall Time 25 ns  MOSFET Transistors Fall Time 25 ns  Siliconix / Vishay MOSFET Transistors Fall Time 25 ns   Gate Charge, Total 4 nC  Siliconix / Vishay Gate Charge, Total 4 nC  MOSFET Transistors Gate Charge, Total 4 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 4 nC   Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +150 °C  MOSFET Transistors Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +150 °C   Package Type TO-236 (SOT-23)  Siliconix / Vishay Package Type TO-236 (SOT-23)  MOSFET Transistors Package Type TO-236 (SOT-23)  Siliconix / Vishay MOSFET Transistors Package Type TO-236 (SOT-23)   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 0.7 W  Siliconix / Vishay Power Dissipation 0.7 W  MOSFET Transistors Power Dissipation 0.7 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.7 W   Resistance, Drain to Source On 0.045 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.045 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.045 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.045 Ohm   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Thermal Resistance, Junction to Ambient 140 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 140 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 140 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 140 °C/W   Time, Rise 80 ns  Siliconix / Vishay Time, Rise 80 ns  MOSFET Transistors Time, Rise 80 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 80 ns   Time, Turn-Off Delay 16 ns  Siliconix / Vishay Time, Turn-Off Delay 16 ns  MOSFET Transistors Time, Turn-Off Delay 16 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 16 ns   Time, Turn-On Delay 7 ns  Siliconix / Vishay Time, Turn-On Delay 7 ns  MOSFET Transistors Time, Turn-On Delay 7 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 7 ns   Transconductance, Forward 8 S  Siliconix / Vishay Transconductance, Forward 8 S  MOSFET Transistors Transconductance, Forward 8 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 8 S   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 0.76 V  Siliconix / Vishay Voltage, Forward, Diode 0.76 V  MOSFET Transistors Voltage, Forward, Diode 0.76 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.76 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V