Brand/Series |
SI23 Series |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Configuration |
Single |
|
Current, Drain |
±3.5 A |
|
Dimensions |
3.04 x 1.4 x 1.02 mm |
|
Gate Charge, Total |
10 nC |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-236 |
|
Polarization |
P-Channel |
|
Power Dissipation |
1.25 W |
|
Resistance, Drain to Source On |
0.044 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
55 ns |
|
Time, Turn-On Delay |
13 ns |
|
Transconductance, Forward |
8.5 S |
|
Typical Gate Charge @ Vgs |
10 nC @ -4 V |
|
Voltage, Breakdown, Drain to Source |
-8 V |
|
Voltage, Drain to Source |
-8 V |
|
Voltage, Forward, Diode |
-1.2 V |
|
Voltage, Gate to Source |
±8 V |
|
Width |
0.055" (1.4mm) |
|
关键词 |