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Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI23 Series
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	4 A
Dimensions	3.04 x 1.4 x 1.02 mm
Fall Time	10 ns
Gate Charge, Total	4.5 nC
Height	0.04" (1.02mm)
Length	0.119" (3.04mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	-55 to +150 °C
Package Type	TO-236
Polarization	N-Channel
Power Dissipation	1.25 W
Resistance, Drain to Source On	0.065 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	100 °C/W
Time, Turn-Off Delay	25 ns
Time, Turn-On Delay	11 ns
Transconductance, Forward	7 S
Typical Gate Charge @ Vgs	14 nC @ -4 V
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	1.2 V
Voltage, Gate to Source	±20 V
Width	0.055" (1.4mm)
关键词

Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 4 A  Siliconix / Vishay Current, Drain 4 A  MOSFET Transistors Current, Drain 4 A  Siliconix / Vishay MOSFET Transistors Current, Drain 4 A   Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay Dimensions 3.04 x 1.4 x 1.02 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm   Fall Time 10 ns  Siliconix / Vishay Fall Time 10 ns  MOSFET Transistors Fall Time 10 ns  Siliconix / Vishay MOSFET Transistors Fall Time 10 ns   Gate Charge, Total 4.5 nC  Siliconix / Vishay Gate Charge, Total 4.5 nC  MOSFET Transistors Gate Charge, Total 4.5 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 4.5 nC   Height 0.04" (1.02mm)  Siliconix / Vishay Height 0.04" (1.02mm)  MOSFET Transistors Height 0.04" (1.02mm)  Siliconix / Vishay MOSFET Transistors Height 0.04" (1.02mm)   Length 0.119" (3.04mm)  Siliconix / Vishay Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  Siliconix / Vishay MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-236  Siliconix / Vishay Package Type TO-236  MOSFET Transistors Package Type TO-236  Siliconix / Vishay MOSFET Transistors Package Type TO-236   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.25 W  Siliconix / Vishay Power Dissipation 1.25 W  MOSFET Transistors Power Dissipation 1.25 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.25 W   Resistance, Drain to Source On 0.065 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.065 Ω  MOSFET Transistors Resistance, Drain to Source On 0.065 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.065 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 100 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 100 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 100 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 100 °C/W   Time, Turn-Off Delay 25 ns  Siliconix / Vishay Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 11 ns  Siliconix / Vishay Time, Turn-On Delay 11 ns  MOSFET Transistors Time, Turn-On Delay 11 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 11 ns   Transconductance, Forward 7 S  Siliconix / Vishay Transconductance, Forward 7 S  MOSFET Transistors Transconductance, Forward 7 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 7 S   Typical Gate Charge @ Vgs 14 nC @ -4 V  Siliconix / Vishay Typical Gate Charge @ Vgs 14 nC @ -4 V  MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -4 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -4 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.055" (1.4mm)  Siliconix / Vishay Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  Siliconix / Vishay MOSFET Transistors Width 0.055" (1.4mm)