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SI2323DS-T1-E3 - 

MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.031Ohm; ID -3.7A; TO-236 (SOT-23); PD 0.75W

Siliconix / Vishay SI2323DS-T1-E3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SI2323DS-T1-E3
仓库库存编号：
70026097
技术数据表：
View SI2323DS-T1-E3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SI2323DS-T1-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI2323DS-T1-E3产品信息

      Brand/Series  SI23 Series  
      Capacitance, Input  1020 pF @ -10 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -2.9 A  
      Dimensions  3.04 x 1.4 x 1.02 mm  
      Gate Charge, Total  12.5 nC  
      Height  0.04" (1.02mm)  
      Length  0.119" (3.04mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-236  
      Polarization  P-Channel  
      Power Dissipation  0.75 W  
      Resistance, Drain to Source On  0.068 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  71 ns  
      Time, Turn-On Delay  25 ns  
      Transconductance, Forward  16 S  
      Typical Gate Charge @ Vgs  12.5 nC @ -4.5 V  
      Voltage, Breakdown, Drain to Source  -20 V  
      Voltage, Drain to Source  -20 V  
      Voltage, Forward, Diode  0.75 V  
      Voltage, Gate to Source  ±8 V  
      Width  0.055" (1.4mm)  
    关键词         

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    Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Capacitance, Input 1020 pF @ -10 V  Siliconix / Vishay Capacitance, Input 1020 pF @ -10 V  MOSFET Transistors Capacitance, Input 1020 pF @ -10 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 1020 pF @ -10 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -2.9 A  Siliconix / Vishay Current, Drain -2.9 A  MOSFET Transistors Current, Drain -2.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -2.9 A   Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay Dimensions 3.04 x 1.4 x 1.02 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm   Gate Charge, Total 12.5 nC  Siliconix / Vishay Gate Charge, Total 12.5 nC  MOSFET Transistors Gate Charge, Total 12.5 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 12.5 nC   Height 0.04" (1.02mm)  Siliconix / Vishay Height 0.04" (1.02mm)  MOSFET Transistors Height 0.04" (1.02mm)  Siliconix / Vishay MOSFET Transistors Height 0.04" (1.02mm)   Length 0.119" (3.04mm)  Siliconix / Vishay Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  Siliconix / Vishay MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Package Type TO-236  Siliconix / Vishay Package Type TO-236  MOSFET Transistors Package Type TO-236  Siliconix / Vishay MOSFET Transistors Package Type TO-236   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 0.75 W  Siliconix / Vishay Power Dissipation 0.75 W  MOSFET Transistors Power Dissipation 0.75 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.75 W   Resistance, Drain to Source On 0.068 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.068 Ω  MOSFET Transistors Resistance, Drain to Source On 0.068 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.068 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 71 ns  Siliconix / Vishay Time, Turn-Off Delay 71 ns  MOSFET Transistors Time, Turn-Off Delay 71 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 71 ns   Time, Turn-On Delay 25 ns  Siliconix / Vishay Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 16 S  Siliconix / Vishay Transconductance, Forward 16 S  MOSFET Transistors Transconductance, Forward 16 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 16 S   Typical Gate Charge @ Vgs 12.5 nC @ -4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 12.5 nC @ -4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 12.5 nC @ -4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 12.5 nC @ -4.5 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode 0.75 V  Siliconix / Vishay Voltage, Forward, Diode 0.75 V  MOSFET Transistors Voltage, Forward, Diode 0.75 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.75 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.055" (1.4mm)  Siliconix / Vishay Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  Siliconix / Vishay MOSFET Transistors Width 0.055" (1.4mm)  
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