关于我们 | 联系我们

库存查询

Features:

Halogen-Free According to IEC 61249-2-21 Definition

TrenchFET® Power MOSFET: 1.8 V Rated

Ultra Low On-Resistance for Increased Battery Life

New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile

Compliant to RoHS Directive 2002/95/EC

Applications:

Load/Power Switching in Portable Devices

Brand/Series	SI44 Series
Channel Mode	Enhancement
Channel Type	N
Configuration	Quad Drain, Triple Source
Current, Drain	9.5 A
Dimensions	5 x 4 x 1.55 mm
Fall Time	12 nS
Gate Charge, Total	16 nC
Height	0.061" (1.55mm)
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	8
Operating and Storage Temperature	-55 to +150 °C
Package Type	SO-8
Polarization	N-Channel
Power Dissipation	1.4 W
Resistance, Drain to Source On	0.011 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	40 ns
Time, Turn-On Delay	15 ns
Transconductance, Forward	50 S
Typical Gate Charge @ Vgs	31 nC @ 15 V
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	0.75 V
Voltage, Gate to Source	±20 V
Width	0.157" (4mm)
关键词

• 参考图片
• 制造商 / 说明 / 型号 / 仓库库存编号
• PDF
• 操作

• 
  
• 3M
  JUMPER WIRE KIT; COMPARTMENTD BX W/14 DIFF LNGTHS, 25 PC/EA
  
  型号：923351-I
  仓库库存编号：70114736
  
• 
  
• 搜索

Brand/Series SI44 Series  Siliconix / Vishay Brand/Series SI44 Series  MOSFET Transistors Brand/Series SI44 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI44 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 9.5 A  Siliconix / Vishay Current, Drain 9.5 A  MOSFET Transistors Current, Drain 9.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 9.5 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Fall Time 12 nS  Siliconix / Vishay Fall Time 12 nS  MOSFET Transistors Fall Time 12 nS  Siliconix / Vishay MOSFET Transistors Fall Time 12 nS   Gate Charge, Total 16 nC  Siliconix / Vishay Gate Charge, Total 16 nC  MOSFET Transistors Gate Charge, Total 16 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 16 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.4 W  Siliconix / Vishay Power Dissipation 1.4 W  MOSFET Transistors Power Dissipation 1.4 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.4 W   Resistance, Drain to Source On 0.011 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.011 Ω  MOSFET Transistors Resistance, Drain to Source On 0.011 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.011 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 40 ns  Siliconix / Vishay Time, Turn-Off Delay 40 ns  MOSFET Transistors Time, Turn-Off Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 40 ns   Time, Turn-On Delay 15 ns  Siliconix / Vishay Time, Turn-On Delay 15 ns  MOSFET Transistors Time, Turn-On Delay 15 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 15 ns   Transconductance, Forward 50 S  Siliconix / Vishay Transconductance, Forward 50 S  MOSFET Transistors Transconductance, Forward 50 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 50 S   Typical Gate Charge @ Vgs 31 nC @ 15 V  Siliconix / Vishay Typical Gate Charge @ Vgs 31 nC @ 15 V  MOSFET Transistors Typical Gate Charge @ Vgs 31 nC @ 15 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 31 nC @ 15 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 0.75 V  Siliconix / Vishay Voltage, Forward, Diode 0.75 V  MOSFET Transistors Voltage, Forward, Diode 0.75 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.75 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)