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SI4559ADY-T1-GE3 - 

MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4W

Siliconix / Vishay SI4559ADY-T1-GE3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SI4559ADY-T1-GE3
仓库库存编号：
70026445
技术数据表：
View SI4559ADY-T1-GE3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SI4559ADY-T1-GE3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI4559ADY-T1-GE3产品信息

      Brand/Series  SI45 Series  
      Capacitance, Input  650 pF @ -15 V (P), 665 pF @ 15 V (N)  
      Channel Mode  Enhancement  
      Channel Type  N, P  
      Configuration  Dual Gate, Dual Source, Quad Drain  
      Current, Drain  -2.4 (P), 5.3 (N) A  
      Dimensions  5 x 4 x 1.55 mm  
      Height  0.061" (1.55mm)  
      Length  0.196" (5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  8  
      Package Type  SO-8  
      Power Dissipation  3.1 (N), 3.4 (P) W  
      Resistance, Drain to Source On  0.072 (N), 0.15 (P) Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  20 (N), 40 (P) ns  
      Time, Turn-On Delay  15 (N), 30 (P) ns  
      Transconductance, Forward  15 (N), 8.5 (P) S  
      Typical Gate Charge @ Vgs  13 nC @ 10 V (N-Channel), 14.5 nC @ -10 V (P-Channel)  
      Voltage, Drain to Source  -60 (P), 60 (N) V  
      Voltage, Forward, Diode  -1.2 (P), 1.2 (N) V  
      Voltage, Gate to Source  ±20 V  
      Width  0.157" (4mm)  
    关键词         

    SI4559ADY-T1-GE3相关搜索

    Brand/Series SI45 Series  Siliconix / Vishay Brand/Series SI45 Series  MOSFET Transistors Brand/Series SI45 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI45 Series   Capacitance, Input 650 pF @ -15 V (P), 665 pF @ 15 V (N)  Siliconix / Vishay Capacitance, Input 650 pF @ -15 V (P), 665 pF @ 15 V (N)  MOSFET Transistors Capacitance, Input 650 pF @ -15 V (P), 665 pF @ 15 V (N)  Siliconix / Vishay MOSFET Transistors Capacitance, Input 650 pF @ -15 V (P), 665 pF @ 15 V (N)   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -2.4 (P), 5.3 (N) A  Siliconix / Vishay Current, Drain -2.4 (P), 5.3 (N) A  MOSFET Transistors Current, Drain -2.4 (P), 5.3 (N) A  Siliconix / Vishay MOSFET Transistors Current, Drain -2.4 (P), 5.3 (N) A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Power Dissipation 3.1 (N), 3.4 (P) W  Siliconix / Vishay Power Dissipation 3.1 (N), 3.4 (P) W  MOSFET Transistors Power Dissipation 3.1 (N), 3.4 (P) W  Siliconix / Vishay MOSFET Transistors Power Dissipation 3.1 (N), 3.4 (P) W   Resistance, Drain to Source On 0.072 (N), 0.15 (P) Ω  Siliconix / Vishay Resistance, Drain to Source On 0.072 (N), 0.15 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.072 (N), 0.15 (P) Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.072 (N), 0.15 (P) Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 20 (N), 40 (P) ns  Siliconix / Vishay Time, Turn-Off Delay 20 (N), 40 (P) ns  MOSFET Transistors Time, Turn-Off Delay 20 (N), 40 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 20 (N), 40 (P) ns   Time, Turn-On Delay 15 (N), 30 (P) ns  Siliconix / Vishay Time, Turn-On Delay 15 (N), 30 (P) ns  MOSFET Transistors Time, Turn-On Delay 15 (N), 30 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 15 (N), 30 (P) ns   Transconductance, Forward 15 (N), 8.5 (P) S  Siliconix / Vishay Transconductance, Forward 15 (N), 8.5 (P) S  MOSFET Transistors Transconductance, Forward 15 (N), 8.5 (P) S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 15 (N), 8.5 (P) S   Typical Gate Charge @ Vgs 13 nC @ 10 V (N-Channel), 14.5 nC @ -10 V (P-Channel)  Siliconix / Vishay Typical Gate Charge @ Vgs 13 nC @ 10 V (N-Channel), 14.5 nC @ -10 V (P-Channel)  MOSFET Transistors Typical Gate Charge @ Vgs 13 nC @ 10 V (N-Channel), 14.5 nC @ -10 V (P-Channel)  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 13 nC @ 10 V (N-Channel), 14.5 nC @ -10 V (P-Channel)   Voltage, Drain to Source -60 (P), 60 (N) V  Siliconix / Vishay Voltage, Drain to Source -60 (P), 60 (N) V  MOSFET Transistors Voltage, Drain to Source -60 (P), 60 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 (P), 60 (N) V   Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  Siliconix / Vishay Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
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