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Brand/Series	SI48 Series
Current, Drain	5.8/8.2 A
Gate Charge, Total	7.8/11.6 nC
Package Type	SO-8
Polarization	N-Channel
Power Dissipation	1/1.25 W
Resistance, Drain to Source On	0.0185/0.0115 Ohms
Temperature, Operating	-55 to 150 °C
Thermal Resistance, Junction to Ambient	100/82 °C/W
Time, Turn-Off Delay	24/31 ns
Time, Turn-On Delay	11/13 ns
Transconductance, Forward	30/31 S
Type	Dual Power
Voltage, Breakdown, Drain to Source	30 V
Voltage, Forward, Diode	1.1/0.5 V
Voltage, Gate to Source	20 V
关键词

Brand/Series SI48 Series  Siliconix / Vishay Brand/Series SI48 Series  MOSFET Transistors Brand/Series SI48 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI48 Series   Current, Drain 5.8/8.2 A  Siliconix / Vishay Current, Drain 5.8/8.2 A  MOSFET Transistors Current, Drain 5.8/8.2 A  Siliconix / Vishay MOSFET Transistors Current, Drain 5.8/8.2 A   Gate Charge, Total 7.8/11.6 nC  Siliconix / Vishay Gate Charge, Total 7.8/11.6 nC  MOSFET Transistors Gate Charge, Total 7.8/11.6 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 7.8/11.6 nC   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1/1.25 W  Siliconix / Vishay Power Dissipation 1/1.25 W  MOSFET Transistors Power Dissipation 1/1.25 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1/1.25 W   Resistance, Drain to Source On 0.0185/0.0115 Ohms  Siliconix / Vishay Resistance, Drain to Source On 0.0185/0.0115 Ohms  MOSFET Transistors Resistance, Drain to Source On 0.0185/0.0115 Ohms  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0185/0.0115 Ohms   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Thermal Resistance, Junction to Ambient 100/82 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 100/82 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 100/82 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 100/82 °C/W   Time, Turn-Off Delay 24/31 ns  Siliconix / Vishay Time, Turn-Off Delay 24/31 ns  MOSFET Transistors Time, Turn-Off Delay 24/31 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 24/31 ns   Time, Turn-On Delay 11/13 ns  Siliconix / Vishay Time, Turn-On Delay 11/13 ns  MOSFET Transistors Time, Turn-On Delay 11/13 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 11/13 ns   Transconductance, Forward 30/31 S  Siliconix / Vishay Transconductance, Forward 30/31 S  MOSFET Transistors Transconductance, Forward 30/31 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30/31 S   Type Dual Power  Siliconix / Vishay Type Dual Power  MOSFET Transistors Type Dual Power  Siliconix / Vishay MOSFET Transistors Type Dual Power   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Forward, Diode 1.1/0.5 V  Siliconix / Vishay Voltage, Forward, Diode 1.1/0.5 V  MOSFET Transistors Voltage, Forward, Diode 1.1/0.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.1/0.5 V   Voltage, Gate to Source 20 V  Siliconix / Vishay Voltage, Gate to Source 20 V  MOSFET Transistors Voltage, Gate to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source 20 V