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SI4850EY-T1-E3 - 

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ohm; ID 6A; SO-8; PD 1.7W; VGS +/-20V; gFS 2

Siliconix / Vishay SI4850EY-T1-E3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SI4850EY-T1-E3
仓库库存编号：
70026070
技术数据表：
View SI4850EY-T1-E3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SI4850EY-T1-E3产品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices

    • SI4850EY-T1-E3产品信息

      Brand/Series  SI48 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  7.2 A  
      Dimensions  5 x 4 x 1.55 mm  
      Gate Charge, Total  18 nC  
      Height  0.061" (1.55mm)  
      Length  0.196" (5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Package Type  SO-8  
      Polarization  N-Channel  
      Power Dissipation  1.7 W  
      Resistance, Drain to Source On  0.047 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  25 ns  
      Time, Turn-On Delay  10 ns  
      Transconductance, Forward  25 S  
      Typical Gate Charge @ Vgs  18 nC @ 13 V  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Drain to Source  60 V  
      Voltage, Forward, Diode  0.8 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.157" (4mm)  
    关键词         

    SI4850EY-T1-E3相关搜索

    Brand/Series SI48 Series  Siliconix / Vishay Brand/Series SI48 Series  MOSFET Transistors Brand/Series SI48 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI48 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 7.2 A  Siliconix / Vishay Current, Drain 7.2 A  MOSFET Transistors Current, Drain 7.2 A  Siliconix / Vishay MOSFET Transistors Current, Drain 7.2 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Gate Charge, Total 18 nC  Siliconix / Vishay Gate Charge, Total 18 nC  MOSFET Transistors Gate Charge, Total 18 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 18 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.7 W  Siliconix / Vishay Power Dissipation 1.7 W  MOSFET Transistors Power Dissipation 1.7 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.7 W   Resistance, Drain to Source On 0.047 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.047 Ω  MOSFET Transistors Resistance, Drain to Source On 0.047 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.047 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 25 ns  Siliconix / Vishay Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 10 ns  Siliconix / Vishay Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 25 S  Siliconix / Vishay Transconductance, Forward 25 S  MOSFET Transistors Transconductance, Forward 25 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 25 S   Typical Gate Charge @ Vgs 18 nC @ 13 V  Siliconix / Vishay Typical Gate Charge @ Vgs 18 nC @ 13 V  MOSFET Transistors Typical Gate Charge @ Vgs 18 nC @ 13 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 18 nC @ 13 V   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  Siliconix / Vishay Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 0.8 V  Siliconix / Vishay Voltage, Forward, Diode 0.8 V  MOSFET Transistors Voltage, Forward, Diode 0.8 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.8 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
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