Brand/Series |
SI49 Series |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Configuration |
Dual Gate, Dual Source, Quad Drain |
|
Current, Drain |
-2.4 A |
|
Dimensions |
5 x 4 x 1.55 mm |
|
Gate Charge, Total |
5.8 nC |
|
Height |
0.061" (1.55mm) |
|
Length |
0.196" (5mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
8 |
|
Package Type |
SO-8 |
|
Polarization |
P-Channel |
|
Power Dissipation |
1.2 W |
|
Resistance, Drain to Source On |
0.135 Ω |
|
Temperature, Operating |
-55 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
87 °C/W |
|
Time, Turn-Off Delay |
21 ns |
|
Time, Turn-On Delay |
8 ns |
|
Transconductance, Forward |
5 S |
|
Typical Gate Charge @ Vgs |
5.8 nC @ -5 V |
|
Voltage, Breakdown, Drain to Source |
-30 V |
|
Voltage, Drain to Source |
-30 V |
|
Voltage, Forward, Diode |
-1.2 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.157" (4mm) |
|
关键词 |