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SI4963BDY-T1-E3 - 

SI4963BDY-T1-E3 P-channel MOSFET Module, 4.9 A, 20 V, 8-Pin SOIC

Siliconix / Vishay SI4963BDY-T1-E3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SI4963BDY-T1-E3
仓库库存编号:
70026239
技术数据表:
View SI4963BDY-T1-E3 Datasheet Datasheet
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由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SI4963BDY-T1-E3产品信息

  Brand/Series  SI49 Series  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Dual Gate, Dual Source, Quad Drain  
  Current, Drain  -3.9 A  
  Dimensions  5 x 4 x 1.55 mm  
  Gate Charge, Total  14 nC  
  Height  0.061" (1.55mm)  
  Length  0.196" (5mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  2  
  Number of Pins  8  
  Package Type  SO-8  
  Polarization  P-Channel  
  Power Dissipation  1.1 W  
  Resistance, Drain to Source On  0.05 Ω  
  Temperature, Operating  -55 to 150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  91 °C/W  
  Time, Turn-Off Delay  80 ns  
  Time, Turn-On Delay  30 ns  
  Transconductance, Forward  18 S  
  Typical Gate Charge @ Vgs  14 nC @ -4.5 V  
  Voltage, Breakdown, Drain to Source  -20 V  
  Voltage, Drain to Source  -20 V  
  Voltage, Forward, Diode  -1.2 V  
  Voltage, Gate to Source  ±12 V  
  Width  0.157" (4mm)  
关键词         

SI4963BDY-T1-E3相关搜索

Brand/Series SI49 Series  Siliconix / Vishay Brand/Series SI49 Series  MOSFET Transistors Brand/Series SI49 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI49 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -3.9 A  Siliconix / Vishay Current, Drain -3.9 A  MOSFET Transistors Current, Drain -3.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -3.9 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Gate Charge, Total 14 nC  Siliconix / Vishay Gate Charge, Total 14 nC  MOSFET Transistors Gate Charge, Total 14 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 14 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.1 W  Siliconix / Vishay Power Dissipation 1.1 W  MOSFET Transistors Power Dissipation 1.1 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.1 W   Resistance, Drain to Source On 0.05 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.05 Ω  MOSFET Transistors Resistance, Drain to Source On 0.05 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.05 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 91 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 91 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 91 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 91 °C/W   Time, Turn-Off Delay 80 ns  Siliconix / Vishay Time, Turn-Off Delay 80 ns  MOSFET Transistors Time, Turn-Off Delay 80 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 80 ns   Time, Turn-On Delay 30 ns  Siliconix / Vishay Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 18 S  Siliconix / Vishay Transconductance, Forward 18 S  MOSFET Transistors Transconductance, Forward 18 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 18 S   Typical Gate Charge @ Vgs 14 nC @ -4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 14 nC @ -4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -4.5 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
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