Brand/Series |
SI49 Series |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Dual Gate, Dual Source, Quad Drain |
|
Current, Drain |
±7.1 A |
|
Dimensions |
5 x 4 x 1.55 mm |
|
Gate Charge, Total |
25 nC |
|
Height |
0.061" (1.55mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
8 |
|
Package Type |
SO-8 |
|
Polarization |
Dual N-Channel |
|
Power Dissipation |
2 W |
|
Resistance, Drain to Source On |
0.019 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
90 ns |
|
Time, Turn-On Delay |
40 ns |
|
Transconductance, Forward |
27 S |
|
Typical Gate Charge @ Vgs |
25 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
20 V |
|
Voltage, Drain to Source |
20 V |
|
Voltage, Forward, Diode |
1.2 V |
|
Voltage, Gate to Source |
±12 V |
|
Width |
0.157" (4mm) |
|
关键词 |