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Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI49 Series
Channel Mode	Enhancement
Channel Type	P
Configuration	Dual Gate, Dual Source, Quad Drain
Current, Drain	-4.6 A
Dimensions	5 x 4 x 1.55 mm
Gate Charge, Total	37 nC
Height	0.061" (1.55mm)
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	SO-8
Polarization	P-Channel
Power Dissipation	1.1 W
Resistance, Drain to Source On	0.029 Ω
Temperature, Operating	-55 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	85 °C/W
Time, Turn-Off Delay	115 ns
Time, Turn-On Delay	10 ns
Transconductance, Forward	22 S
Typical Gate Charge @ Vgs	37 nC @ -10 V
Voltage, Breakdown, Drain to Source	-30 V
Voltage, Drain to Source	-30 V
Voltage, Forward, Diode	-1.2 V
Voltage, Gate to Source	±25 V
Width	0.157" (4mm)
关键词

Brand/Series SI49 Series  Siliconix / Vishay Brand/Series SI49 Series  MOSFET Transistors Brand/Series SI49 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI49 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -4.6 A  Siliconix / Vishay Current, Drain -4.6 A  MOSFET Transistors Current, Drain -4.6 A  Siliconix / Vishay MOSFET Transistors Current, Drain -4.6 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Gate Charge, Total 37 nC  Siliconix / Vishay Gate Charge, Total 37 nC  MOSFET Transistors Gate Charge, Total 37 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 37 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.1 W  Siliconix / Vishay Power Dissipation 1.1 W  MOSFET Transistors Power Dissipation 1.1 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.1 W   Resistance, Drain to Source On 0.029 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.029 Ω  MOSFET Transistors Resistance, Drain to Source On 0.029 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.029 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 85 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 85 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 85 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 85 °C/W   Time, Turn-Off Delay 115 ns  Siliconix / Vishay Time, Turn-Off Delay 115 ns  MOSFET Transistors Time, Turn-Off Delay 115 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 115 ns   Time, Turn-On Delay 10 ns  Siliconix / Vishay Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 22 S  Siliconix / Vishay Transconductance, Forward 22 S  MOSFET Transistors Transconductance, Forward 22 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 22 S   Typical Gate Charge @ Vgs 37 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 37 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 37 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 37 nC @ -10 V   Voltage, Breakdown, Drain to Source -30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V   Voltage, Drain to Source -30 V  Siliconix / Vishay Voltage, Drain to Source -30 V  MOSFET Transistors Voltage, Drain to Source -30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -30 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±25 V  Siliconix / Vishay Voltage, Gate to Source ±25 V  MOSFET Transistors Voltage, Gate to Source ±25 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±25 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)