关于我们 | 联系我们

库存查询

Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI59 Series
Channel Mode	Enhancement
Channel Type	P
Configuration	Dual Gate, Dual Source, Quad Drain
Current, Drain	-1.9 A
Dimensions	3.1 x 1.7 x 1.1 mm
Gate Charge, Total	5.1 nC
Height	0.043" (1.1mm)
Length	0.122" (3.1mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	1206-8 ChipFET
Polarization	P-Channel
Power Dissipation	1.1 W
Resistance, Drain to Source On	0.11 Ω
Temperature, Operating	-55 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	0.11 °C/W
Time, Turn-Off Delay	30 ns
Time, Turn-On Delay	16 ns
Transconductance, Forward	7 S
Typical Gate Charge @ Vgs	5.1 nC @ -10 V
Voltage, Breakdown, Drain to Source	-20 V
Voltage, Drain to Source	-20 V
Voltage, Forward, Diode	-1.2 V
Voltage, Gate to Source	±8 V
Width	0.067" (1.7mm)
关键词

Brand/Series SI59 Series  Siliconix / Vishay Brand/Series SI59 Series  MOSFET Transistors Brand/Series SI59 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI59 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -1.9 A  Siliconix / Vishay Current, Drain -1.9 A  MOSFET Transistors Current, Drain -1.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -1.9 A   Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay Dimensions 3.1 x 1.7 x 1.1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm   Gate Charge, Total 5.1 nC  Siliconix / Vishay Gate Charge, Total 5.1 nC  MOSFET Transistors Gate Charge, Total 5.1 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 5.1 nC   Height 0.043" (1.1mm)  Siliconix / Vishay Height 0.043" (1.1mm)  MOSFET Transistors Height 0.043" (1.1mm)  Siliconix / Vishay MOSFET Transistors Height 0.043" (1.1mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type 1206-8 ChipFET  Siliconix / Vishay Package Type 1206-8 ChipFET  MOSFET Transistors Package Type 1206-8 ChipFET  Siliconix / Vishay MOSFET Transistors Package Type 1206-8 ChipFET   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.1 W  Siliconix / Vishay Power Dissipation 1.1 W  MOSFET Transistors Power Dissipation 1.1 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.1 W   Resistance, Drain to Source On 0.11 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.11 Ω  MOSFET Transistors Resistance, Drain to Source On 0.11 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.11 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 0.11 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 0.11 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 0.11 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 0.11 °C/W   Time, Turn-Off Delay 30 ns  Siliconix / Vishay Time, Turn-Off Delay 30 ns  MOSFET Transistors Time, Turn-Off Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 30 ns   Time, Turn-On Delay 16 ns  Siliconix / Vishay Time, Turn-On Delay 16 ns  MOSFET Transistors Time, Turn-On Delay 16 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 16 ns   Transconductance, Forward 7 S  Siliconix / Vishay Transconductance, Forward 7 S  MOSFET Transistors Transconductance, Forward 7 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 7 S   Typical Gate Charge @ Vgs 5.1 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 5.1 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 5.1 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 5.1 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.067" (1.7mm)  Siliconix / Vishay Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  Siliconix / Vishay MOSFET Transistors Width 0.067" (1.7mm)