关于我们 | 联系我们

库存查询

Brand/Series	SI64 Series
Channel Mode	Enhancement
Channel Type	P
Configuration	Dual Drain, Dual Gate, Quad
Current, Drain	-4.9 A
Dimensions	4.5 x 3.1 x 1.05 mm
Fall Time	150 ns
Gate Charge, Total	60 nC
Height	0.041" (1.05mm)
Length	0.177" (4.5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Operating and Storage Temperature	-55 to +150 °C
Package Type	TSSOP
Polarization	P-Channel
Power Dissipation	1.05 W
Resistance, Drain to Source On	0.015 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	120 °C/W
Time, Turn-Off Delay	300 ns
Time, Turn-On Delay	55 ns
Transconductance, Forward	34 S
Typical Gate Charge @ Vgs	40 nC @ -10 V
Voltage, Breakdown, Drain to Source	-20 V
Voltage, Drain to Source	-20 V
Voltage, Forward, Diode	-1.1 V
Voltage, Gate to Source	±8 V
Width	0.122" (3.1mm)
关键词

Brand/Series SI64 Series  Siliconix / Vishay Brand/Series SI64 Series  MOSFET Transistors Brand/Series SI64 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI64 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay Configuration Dual Drain, Dual Gate, Quad  MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad   Current, Drain -4.9 A  Siliconix / Vishay Current, Drain -4.9 A  MOSFET Transistors Current, Drain -4.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -4.9 A   Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay Dimensions 4.5 x 3.1 x 1.05 mm  MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm   Fall Time 150 ns  Siliconix / Vishay Fall Time 150 ns  MOSFET Transistors Fall Time 150 ns  Siliconix / Vishay MOSFET Transistors Fall Time 150 ns   Gate Charge, Total 60 nC  Siliconix / Vishay Gate Charge, Total 60 nC  MOSFET Transistors Gate Charge, Total 60 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 60 nC   Height 0.041" (1.05mm)  Siliconix / Vishay Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  Siliconix / Vishay MOSFET Transistors Height 0.041" (1.05mm)   Length 0.177" (4.5mm)  Siliconix / Vishay Length 0.177" (4.5mm)  MOSFET Transistors Length 0.177" (4.5mm)  Siliconix / Vishay MOSFET Transistors Length 0.177" (4.5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TSSOP  Siliconix / Vishay Package Type TSSOP  MOSFET Transistors Package Type TSSOP  Siliconix / Vishay MOSFET Transistors Package Type TSSOP   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.05 W  Siliconix / Vishay Power Dissipation 1.05 W  MOSFET Transistors Power Dissipation 1.05 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.05 W   Resistance, Drain to Source On 0.015 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.015 Ω  MOSFET Transistors Resistance, Drain to Source On 0.015 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.015 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 120 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 120 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 120 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 120 °C/W   Time, Turn-Off Delay 300 ns  Siliconix / Vishay Time, Turn-Off Delay 300 ns  MOSFET Transistors Time, Turn-Off Delay 300 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 300 ns   Time, Turn-On Delay 55 ns  Siliconix / Vishay Time, Turn-On Delay 55 ns  MOSFET Transistors Time, Turn-On Delay 55 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 55 ns   Transconductance, Forward 34 S  Siliconix / Vishay Transconductance, Forward 34 S  MOSFET Transistors Transconductance, Forward 34 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 34 S   Typical Gate Charge @ Vgs 40 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 40 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 40 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 40 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.1 V  Siliconix / Vishay Voltage, Forward, Diode -1.1 V  MOSFET Transistors Voltage, Forward, Diode -1.1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.1 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.122" (3.1mm)  Siliconix / Vishay Width 0.122" (3.1mm)  MOSFET Transistors Width 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Width 0.122" (3.1mm)