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Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI65 Series
Channel Mode	Enhancement
Channel Type	N, P
Configuration	Dual Drain, Dual Gate, Quad
Current, Drain	-2.6 (P), 3.7 (N) A
Dimensions	3.1 x 4.5 x 1.05 mm
Height	0.041" (1.05mm)
Length	0.122" (3.1mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	TSSOP-8
Power Dissipation	0.83 W
Resistance, Drain to Source On	0.046 (N), 0.073 (P) Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	30 (N), 40 (P) ns
Time, Turn-On Delay	13 (N), 14 (P) ns
Transconductance, Forward	11 S
Typical Gate Charge @ Vgs	16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)
Voltage, Drain to Source	-30 (P), 30 (N) V
Voltage, Forward, Diode	-1.1 (P), 1.1 (N) V
Voltage, Gate to Source	±20 V
Width	0.177" (4.5mm)
关键词

Brand/Series SI65 Series  Siliconix / Vishay Brand/Series SI65 Series  MOSFET Transistors Brand/Series SI65 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI65 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay Configuration Dual Drain, Dual Gate, Quad  MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad   Current, Drain -2.6 (P), 3.7 (N) A  Siliconix / Vishay Current, Drain -2.6 (P), 3.7 (N) A  MOSFET Transistors Current, Drain -2.6 (P), 3.7 (N) A  Siliconix / Vishay MOSFET Transistors Current, Drain -2.6 (P), 3.7 (N) A   Dimensions 3.1 x 4.5 x 1.05 mm  Siliconix / Vishay Dimensions 3.1 x 4.5 x 1.05 mm  MOSFET Transistors Dimensions 3.1 x 4.5 x 1.05 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 4.5 x 1.05 mm   Height 0.041" (1.05mm)  Siliconix / Vishay Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  Siliconix / Vishay MOSFET Transistors Height 0.041" (1.05mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type TSSOP-8  Siliconix / Vishay Package Type TSSOP-8  MOSFET Transistors Package Type TSSOP-8  Siliconix / Vishay MOSFET Transistors Package Type TSSOP-8   Power Dissipation 0.83 W  Siliconix / Vishay Power Dissipation 0.83 W  MOSFET Transistors Power Dissipation 0.83 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.83 W   Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω  Siliconix / Vishay Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 30 (N), 40 (P) ns  Siliconix / Vishay Time, Turn-Off Delay 30 (N), 40 (P) ns  MOSFET Transistors Time, Turn-Off Delay 30 (N), 40 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 30 (N), 40 (P) ns   Time, Turn-On Delay 13 (N), 14 (P) ns  Siliconix / Vishay Time, Turn-On Delay 13 (N), 14 (P) ns  MOSFET Transistors Time, Turn-On Delay 13 (N), 14 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 13 (N), 14 (P) ns   Transconductance, Forward 11 S  Siliconix / Vishay Transconductance, Forward 11 S  MOSFET Transistors Transconductance, Forward 11 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 11 S   Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)  Siliconix / Vishay Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)  MOSFET Transistors Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)   Voltage, Drain to Source -30 (P), 30 (N) V  Siliconix / Vishay Voltage, Drain to Source -30 (P), 30 (N) V  MOSFET Transistors Voltage, Drain to Source -30 (P), 30 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -30 (P), 30 (N) V   Voltage, Forward, Diode -1.1 (P), 1.1 (N) V  Siliconix / Vishay Voltage, Forward, Diode -1.1 (P), 1.1 (N) V  MOSFET Transistors Voltage, Forward, Diode -1.1 (P), 1.1 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.1 (P), 1.1 (N) V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.177" (4.5mm)  Siliconix / Vishay Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Siliconix / Vishay MOSFET Transistors Width 0.177" (4.5mm)