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SI8402DB-T1-E1 - 

20-V N-CHANNEL 1.8-V (G-S) MOSFET

Siliconix / Vishay SI8402DB-T1-E1
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SI8402DB-T1-E1
仓库库存编号:
70026295
技术数据表:
View SI8402DB-T1-E1 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SI8402DB-T1-E1产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI8402DB-T1-E1产品信息

      Brand/Series  SI84 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Dual Drain  
      Current, Drain  5.3 A  
      Dimensions  1.6 x 1.6 x 0.36 mm  
      Height  0.014" (0.36mm)  
      Length  0.062" (1.5748mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  4  
      Package Type  MICRO FOOT  
      Power Dissipation  1.47 W  
      Resistance, Drain to Source On  0.043 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  145 ns  
      Time, Turn-On Delay  30 ns  
      Transconductance, Forward  12 S  
      Typical Gate Charge @ Vgs  17 nC @ 4.5 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±8 V  
      Width  0.063" (1.6mm)  
    关键词         

    SI8402DB-T1-E1相关搜索

    Brand/Series SI84 Series  Siliconix / Vishay Brand/Series SI84 Series  MOSFET Transistors Brand/Series SI84 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI84 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Dual Drain  Siliconix / Vishay Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain   Current, Drain 5.3 A  Siliconix / Vishay Current, Drain 5.3 A  MOSFET Transistors Current, Drain 5.3 A  Siliconix / Vishay MOSFET Transistors Current, Drain 5.3 A   Dimensions 1.6 x 1.6 x 0.36 mm  Siliconix / Vishay Dimensions 1.6 x 1.6 x 0.36 mm  MOSFET Transistors Dimensions 1.6 x 1.6 x 0.36 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.6 x 1.6 x 0.36 mm   Height 0.014" (0.36mm)  Siliconix / Vishay Height 0.014" (0.36mm)  MOSFET Transistors Height 0.014" (0.36mm)  Siliconix / Vishay MOSFET Transistors Height 0.014" (0.36mm)   Length 0.062" (1.5748mm)  Siliconix / Vishay Length 0.062" (1.5748mm)  MOSFET Transistors Length 0.062" (1.5748mm)  Siliconix / Vishay MOSFET Transistors Length 0.062" (1.5748mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 4  Siliconix / Vishay Number of Pins 4  MOSFET Transistors Number of Pins 4  Siliconix / Vishay MOSFET Transistors Number of Pins 4   Package Type MICRO FOOT  Siliconix / Vishay Package Type MICRO FOOT  MOSFET Transistors Package Type MICRO FOOT  Siliconix / Vishay MOSFET Transistors Package Type MICRO FOOT   Power Dissipation 1.47 W  Siliconix / Vishay Power Dissipation 1.47 W  MOSFET Transistors Power Dissipation 1.47 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.47 W   Resistance, Drain to Source On 0.043 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.043 Ω  MOSFET Transistors Resistance, Drain to Source On 0.043 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.043 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 145 ns  Siliconix / Vishay Time, Turn-Off Delay 145 ns  MOSFET Transistors Time, Turn-Off Delay 145 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 145 ns   Time, Turn-On Delay 30 ns  Siliconix / Vishay Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 12 S  Siliconix / Vishay Transconductance, Forward 12 S  MOSFET Transistors Transconductance, Forward 12 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 12 S   Typical Gate Charge @ Vgs 17 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 17 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 17 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 17 nC @ 4.5 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.063" (1.6mm)  Siliconix / Vishay Width 0.063" (1.6mm)  MOSFET Transistors Width 0.063" (1.6mm)  Siliconix / Vishay MOSFET Transistors Width 0.063" (1.6mm)  
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