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Features:

Halogen-Free According to IEC 61249-2-21 Definition

TrenchFET® Gen IV Power MOSFET

100% Rg and UIS Tested

Compliant to RoHS Directive 2002/95/EC
Applications:

Synchronous Rectification

ORing

High Power Density DC/DC

VRMs and Embedded DC/DC

Brand/Series	TrenchFET Series
Capacitance, Input	6150 pF @ 15 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Quad Drain, Triple Source
Current, Drain	50 A
Dimensions	5.99 x 5 x 1.07 mm
Fall Time	16 ns
Gate Charge, Total	34.3 nC
Height	0.042" (1.07mm)
Length	0.235" (5.99mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	8
Operating and Storage Temperature	-55 to 150 °C
Package Type	PowerPAK-SO-8
Polarization	N-Channel
Power Dissipation	32 W
Resistance, Drain to Source On	0.0027 Ω
Resistance, Thermal, Junction to Case	2.5 °C/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	25 °C/W
Time, Turn-Off Delay	42 ns
Time, Turn-On Delay	31 ns
Transconductance, Forward	110 S
Typical Gate Charge @ Vgs	78 nC @ 10 V
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	1.1 V
Voltage, Gate to Source	-16, 20 V
Width	0.197" (5mm)
关键词

Brand/Series TrenchFET Series  Siliconix / Vishay Brand/Series TrenchFET Series  MOSFET Transistors Brand/Series TrenchFET Series  Siliconix / Vishay MOSFET Transistors Brand/Series TrenchFET Series   Capacitance, Input 6150 pF @ 15 V  Siliconix / Vishay Capacitance, Input 6150 pF @ 15 V  MOSFET Transistors Capacitance, Input 6150 pF @ 15 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 6150 pF @ 15 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 50 A  Siliconix / Vishay Current, Drain 50 A  MOSFET Transistors Current, Drain 50 A  Siliconix / Vishay MOSFET Transistors Current, Drain 50 A   Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay Dimensions 5.99 x 5 x 1.07 mm  MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm   Fall Time 16 ns  Siliconix / Vishay Fall Time 16 ns  MOSFET Transistors Fall Time 16 ns  Siliconix / Vishay MOSFET Transistors Fall Time 16 ns   Gate Charge, Total 34.3 nC  Siliconix / Vishay Gate Charge, Total 34.3 nC  MOSFET Transistors Gate Charge, Total 34.3 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 34.3 nC   Height 0.042" (1.07mm)  Siliconix / Vishay Height 0.042" (1.07mm)  MOSFET Transistors Height 0.042" (1.07mm)  Siliconix / Vishay MOSFET Transistors Height 0.042" (1.07mm)   Length 0.235" (5.99mm)  Siliconix / Vishay Length 0.235" (5.99mm)  MOSFET Transistors Length 0.235" (5.99mm)  Siliconix / Vishay MOSFET Transistors Length 0.235" (5.99mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type PowerPAK-SO-8  Siliconix / Vishay Package Type PowerPAK-SO-8  MOSFET Transistors Package Type PowerPAK-SO-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK-SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 32 W  Siliconix / Vishay Power Dissipation 32 W  MOSFET Transistors Power Dissipation 32 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 32 W   Resistance, Drain to Source On 0.0027 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.0027 Ω  MOSFET Transistors Resistance, Drain to Source On 0.0027 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0027 Ω   Resistance, Thermal, Junction to Case 2.5 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 2.5 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C/W   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 25 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 25 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 25 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 25 °C/W   Time, Turn-Off Delay 42 ns  Siliconix / Vishay Time, Turn-Off Delay 42 ns  MOSFET Transistors Time, Turn-Off Delay 42 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 42 ns   Time, Turn-On Delay 31 ns  Siliconix / Vishay Time, Turn-On Delay 31 ns  MOSFET Transistors Time, Turn-On Delay 31 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 31 ns   Transconductance, Forward 110 S  Siliconix / Vishay Transconductance, Forward 110 S  MOSFET Transistors Transconductance, Forward 110 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 110 S   Typical Gate Charge @ Vgs 78 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 78 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 78 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 78 nC @ 10 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.1 V  Siliconix / Vishay Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source -16, 20 V  Siliconix / Vishay Voltage, Gate to Source -16, 20 V  MOSFET Transistors Voltage, Gate to Source -16, 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source -16, 20 V   Width 0.197" (5mm)  Siliconix / Vishay Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Siliconix / Vishay MOSFET Transistors Width 0.197" (5mm)