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SIRA02DP-T1-GE3 - 

Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8

Siliconix / Vishay SIRA02DP-T1-GE3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SIRA02DP-T1-GE3
仓库库存编号:
70243883
技术数据表:
View SIRA02DP-T1-GE3 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SIRA02DP-T1-GE3产品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Gen IV Power MOSFET
  • 100% Rg and UIS Tested
  • Compliant to RoHS Directive 2002/95/EC
    Applications:
  • Synchronous Rectification
  • ORing
  • High Power Density DC/DC
  • VRMs and Embedded DC/DC
  • SIRA02DP-T1-GE3产品信息

      Brand/Series  TrenchFET Series  
      Capacitance, Input  6150 pF @ 15 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  50 A  
      Dimensions  5.99 x 5 x 1.07 mm  
      Fall Time  16 ns  
      Gate Charge, Total  34.3 nC  
      Height  0.042" (1.07mm)  
      Length  0.235" (5.99mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  PowerPAK-SO-8  
      Polarization  N-Channel  
      Power Dissipation  32 W  
      Resistance, Drain to Source On  0.0027 Ω  
      Resistance, Thermal, Junction to Case  2.5 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  25 °C/W  
      Time, Turn-Off Delay  42 ns  
      Time, Turn-On Delay  31 ns  
      Transconductance, Forward  110 S  
      Typical Gate Charge @ Vgs  78 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  30 V  
      Voltage, Drain to Source  30 V  
      Voltage, Forward, Diode  1.1 V  
      Voltage, Gate to Source  -16, 20 V  
      Width  0.197" (5mm)  
    关键词         

    SIRA02DP-T1-GE3相关搜索

    Brand/Series TrenchFET Series  Siliconix / Vishay Brand/Series TrenchFET Series  MOSFET Transistors Brand/Series TrenchFET Series  Siliconix / Vishay MOSFET Transistors Brand/Series TrenchFET Series   Capacitance, Input 6150 pF @ 15 V  Siliconix / Vishay Capacitance, Input 6150 pF @ 15 V  MOSFET Transistors Capacitance, Input 6150 pF @ 15 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 6150 pF @ 15 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 50 A  Siliconix / Vishay Current, Drain 50 A  MOSFET Transistors Current, Drain 50 A  Siliconix / Vishay MOSFET Transistors Current, Drain 50 A   Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay Dimensions 5.99 x 5 x 1.07 mm  MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm   Fall Time 16 ns  Siliconix / Vishay Fall Time 16 ns  MOSFET Transistors Fall Time 16 ns  Siliconix / Vishay MOSFET Transistors Fall Time 16 ns   Gate Charge, Total 34.3 nC  Siliconix / Vishay Gate Charge, Total 34.3 nC  MOSFET Transistors Gate Charge, Total 34.3 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 34.3 nC   Height 0.042" (1.07mm)  Siliconix / Vishay Height 0.042" (1.07mm)  MOSFET Transistors Height 0.042" (1.07mm)  Siliconix / Vishay MOSFET Transistors Height 0.042" (1.07mm)   Length 0.235" (5.99mm)  Siliconix / Vishay Length 0.235" (5.99mm)  MOSFET Transistors Length 0.235" (5.99mm)  Siliconix / Vishay MOSFET Transistors Length 0.235" (5.99mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type PowerPAK-SO-8  Siliconix / Vishay Package Type PowerPAK-SO-8  MOSFET Transistors Package Type PowerPAK-SO-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK-SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 32 W  Siliconix / Vishay Power Dissipation 32 W  MOSFET Transistors Power Dissipation 32 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 32 W   Resistance, Drain to Source On 0.0027 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.0027 Ω  MOSFET Transistors Resistance, Drain to Source On 0.0027 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0027 Ω   Resistance, Thermal, Junction to Case 2.5 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 2.5 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C/W   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 25 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 25 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 25 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 25 °C/W   Time, Turn-Off Delay 42 ns  Siliconix / Vishay Time, Turn-Off Delay 42 ns  MOSFET Transistors Time, Turn-Off Delay 42 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 42 ns   Time, Turn-On Delay 31 ns  Siliconix / Vishay Time, Turn-On Delay 31 ns  MOSFET Transistors Time, Turn-On Delay 31 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 31 ns   Transconductance, Forward 110 S  Siliconix / Vishay Transconductance, Forward 110 S  MOSFET Transistors Transconductance, Forward 110 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 110 S   Typical Gate Charge @ Vgs 78 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 78 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 78 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 78 nC @ 10 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.1 V  Siliconix / Vishay Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source -16, 20 V  Siliconix / Vishay Voltage, Gate to Source -16, 20 V  MOSFET Transistors Voltage, Gate to Source -16, 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source -16, 20 V   Width 0.197" (5mm)  Siliconix / Vishay Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Siliconix / Vishay MOSFET Transistors Width 0.197" (5mm)  
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