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Features:

TrenchFET® Power MOSFETS

175°C Junction Temperature

100% R_g Tested

Brand/Series	SUD Series
Channel Type	N
Current, Drain	19.5 A
Fall Time	40 ns
Gate Charge, Total	17 nC
Operating and Storage Temperature	–55 to +175 °C
Package Type	TO-252
Polarization	N-Channel
Power Dissipation	100 W
Resistance, Drain to Source On	0.045 Ohm
Resistance, Thermal, Junction to Case	4 °C/W
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	–55 °C
Thermal Resistance, Junction to Ambient	52 °C/W
Time, Rise	25 ns
Time, Turn-Off Delay	45 ns
Time, Turn-On Delay	15 ns
Transconductance, Forward	20 S
Voltage, Breakdown, Drain to Source	60 V
Voltage, Drain to Source	60 V
Voltage, Forward, Diode	1.5 V
Voltage, Gate to Source	±20 V
关键词

Brand/Series SUD Series  Siliconix / Vishay Brand/Series SUD Series  MOSFET Transistors Brand/Series SUD Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUD Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 19.5 A  Siliconix / Vishay Current, Drain 19.5 A  MOSFET Transistors Current, Drain 19.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 19.5 A   Fall Time 40 ns  Siliconix / Vishay Fall Time 40 ns  MOSFET Transistors Fall Time 40 ns  Siliconix / Vishay MOSFET Transistors Fall Time 40 ns   Gate Charge, Total 17 nC  Siliconix / Vishay Gate Charge, Total 17 nC  MOSFET Transistors Gate Charge, Total 17 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 17 nC   Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +175 °C  MOSFET Transistors Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +175 °C   Package Type TO-252  Siliconix / Vishay Package Type TO-252  MOSFET Transistors Package Type TO-252  Siliconix / Vishay MOSFET Transistors Package Type TO-252   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 100 W  Siliconix / Vishay Power Dissipation 100 W  MOSFET Transistors Power Dissipation 100 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 100 W   Resistance, Drain to Source On 0.045 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.045 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.045 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.045 Ohm   Resistance, Thermal, Junction to Case 4 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 4 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 4 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 4 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum –55 °C  Siliconix / Vishay Temperature, Operating, Minimum –55 °C  MOSFET Transistors Temperature, Operating, Minimum –55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum –55 °C   Thermal Resistance, Junction to Ambient 52 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 52 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 52 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 52 °C/W   Time, Rise 25 ns  Siliconix / Vishay Time, Rise 25 ns  MOSFET Transistors Time, Rise 25 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 25 ns   Time, Turn-Off Delay 45 ns  Siliconix / Vishay Time, Turn-Off Delay 45 ns  MOSFET Transistors Time, Turn-Off Delay 45 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 45 ns   Time, Turn-On Delay 15 ns  Siliconix / Vishay Time, Turn-On Delay 15 ns  MOSFET Transistors Time, Turn-On Delay 15 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 15 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  Siliconix / Vishay Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.5 V  Siliconix / Vishay Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V