关于我们 | 联系我们

库存查询

Features:

TrenchFET® Power MOSFETS

175°C Junction Temperature

Optimized for Low-Side Synchronous Rectifier Operation

100% R_g Tested

Applications:

DC/DC Converters

Synchronous Rectifiers

Brand/Series	SUD Series
Capacitance, Input	3100 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	84 A
Dimensions	6.73 x 6.22 x 2.38 mm
Fall Time	15 ns
Gate Charge, Total	30 nC
Height	0.094" (2.38mm)
Length	0.264" (6.73mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	–55 to +175 °C
Package Type	TO-252
Polarization	N-Channel
Power Dissipation	88 W
Resistance, Drain to Source On	0.0105 Ω
Resistance, Thermal, Junction to Case	1.7 °C/W
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Thermal Resistance, Junction to Ambient	18 °C/W
Time, Turn-Off Delay	30 ns
Time, Turn-On Delay	12 ns
Transconductance, Forward	20 S
Typical Gate Charge @ Vgs	21 nC @ 4.5 V
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	1.5 V
Voltage, Gate to Source	±20 V
Width	0.245" (6.22mm)
关键词

Brand/Series SUD Series  Siliconix / Vishay Brand/Series SUD Series  MOSFET Transistors Brand/Series SUD Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUD Series   Capacitance, Input 3100 pF @ 25 V  Siliconix / Vishay Capacitance, Input 3100 pF @ 25 V  MOSFET Transistors Capacitance, Input 3100 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 3100 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 84 A  Siliconix / Vishay Current, Drain 84 A  MOSFET Transistors Current, Drain 84 A  Siliconix / Vishay MOSFET Transistors Current, Drain 84 A   Dimensions 6.73 x 6.22 x 2.38 mm  Siliconix / Vishay Dimensions 6.73 x 6.22 x 2.38 mm  MOSFET Transistors Dimensions 6.73 x 6.22 x 2.38 mm  Siliconix / Vishay MOSFET Transistors Dimensions 6.73 x 6.22 x 2.38 mm   Fall Time 15 ns  Siliconix / Vishay Fall Time 15 ns  MOSFET Transistors Fall Time 15 ns  Siliconix / Vishay MOSFET Transistors Fall Time 15 ns   Gate Charge, Total 30 nC  Siliconix / Vishay Gate Charge, Total 30 nC  MOSFET Transistors Gate Charge, Total 30 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 30 nC   Height 0.094" (2.38mm)  Siliconix / Vishay Height 0.094" (2.38mm)  MOSFET Transistors Height 0.094" (2.38mm)  Siliconix / Vishay MOSFET Transistors Height 0.094" (2.38mm)   Length 0.264" (6.73mm)  Siliconix / Vishay Length 0.264" (6.73mm)  MOSFET Transistors Length 0.264" (6.73mm)  Siliconix / Vishay MOSFET Transistors Length 0.264" (6.73mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +175 °C  MOSFET Transistors Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +175 °C   Package Type TO-252  Siliconix / Vishay Package Type TO-252  MOSFET Transistors Package Type TO-252  Siliconix / Vishay MOSFET Transistors Package Type TO-252   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 88 W  Siliconix / Vishay Power Dissipation 88 W  MOSFET Transistors Power Dissipation 88 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 88 W   Resistance, Drain to Source On 0.0105 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.0105 Ω  MOSFET Transistors Resistance, Drain to Source On 0.0105 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0105 Ω   Resistance, Thermal, Junction to Case 1.7 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 1.7 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 1.7 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 1.7 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 18 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 18 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 18 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 18 °C/W   Time, Turn-Off Delay 30 ns  Siliconix / Vishay Time, Turn-Off Delay 30 ns  MOSFET Transistors Time, Turn-Off Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 30 ns   Time, Turn-On Delay 12 ns  Siliconix / Vishay Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Typical Gate Charge @ Vgs 21 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 21 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.5 V  Siliconix / Vishay Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.245" (6.22mm)  Siliconix / Vishay Width 0.245" (6.22mm)  MOSFET Transistors Width 0.245" (6.22mm)  Siliconix / Vishay MOSFET Transistors Width 0.245" (6.22mm)