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SUD50N06-08H-E3 - 

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.0065Ohm; ID 93A; TO-252; PD 136W; VGS +/-20V

Siliconix / Vishay SUD50N06-08H-E3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SUD50N06-08H-E3
仓库库存编号:
70026021
技术数据表:
View SUD50N06-08H-E3 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SUD50N06-08H-E3产品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices
  • SUD50N06-08H-E3产品信息

      Application  Automotive such as high-side switch, motor drives, 12 V battery  
      Brand/Series  SUD Series  
      Capacitance, Input  7000 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  93 A  
      Dimensions  6.73 x 6.22 x 2.38 mm  
      Fall Time  10 nS  
      Gate Charge, Total  94 nC  
      Height  0.094" (2.38mm)  
      Length  0.264" (6.73mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-252  
      Polarization  N-Channel  
      Power Dissipation  136 W  
      Resistance, Drain to Source On  0.0065 Ohm  
      Resistance, Thermal, Junction to Case  0.85 °C⁄W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  15 °C⁄W  
      Time, Rise  13 nS  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  28 ns  
      Transconductance, Forward  25 S  
      Typical Gate Charge @ Vgs  94 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Drain to Source  60 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.245" (6.22mm)  
    关键词         

    SUD50N06-08H-E3相关搜索

    Application Automotive such as high-side switch, motor drives, 12 V battery  Siliconix / Vishay Application Automotive such as high-side switch, motor drives, 12 V battery  MOSFET Transistors Application Automotive such as high-side switch, motor drives, 12 V battery  Siliconix / Vishay MOSFET Transistors Application Automotive such as high-side switch, motor drives, 12 V battery   Brand/Series SUD Series  Siliconix / Vishay Brand/Series SUD Series  MOSFET Transistors Brand/Series SUD Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUD Series   Capacitance, Input 7000 pF @ 25 V  Siliconix / Vishay Capacitance, Input 7000 pF @ 25 V  MOSFET Transistors Capacitance, Input 7000 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 7000 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 93 A  Siliconix / Vishay Current, Drain 93 A  MOSFET Transistors Current, Drain 93 A  Siliconix / Vishay MOSFET Transistors Current, Drain 93 A   Dimensions 6.73 x 6.22 x 2.38 mm  Siliconix / Vishay Dimensions 6.73 x 6.22 x 2.38 mm  MOSFET Transistors Dimensions 6.73 x 6.22 x 2.38 mm  Siliconix / Vishay MOSFET Transistors Dimensions 6.73 x 6.22 x 2.38 mm   Fall Time 10 nS  Siliconix / Vishay Fall Time 10 nS  MOSFET Transistors Fall Time 10 nS  Siliconix / Vishay MOSFET Transistors Fall Time 10 nS   Gate Charge, Total 94 nC  Siliconix / Vishay Gate Charge, Total 94 nC  MOSFET Transistors Gate Charge, Total 94 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 94 nC   Height 0.094" (2.38mm)  Siliconix / Vishay Height 0.094" (2.38mm)  MOSFET Transistors Height 0.094" (2.38mm)  Siliconix / Vishay MOSFET Transistors Height 0.094" (2.38mm)   Length 0.264" (6.73mm)  Siliconix / Vishay Length 0.264" (6.73mm)  MOSFET Transistors Length 0.264" (6.73mm)  Siliconix / Vishay MOSFET Transistors Length 0.264" (6.73mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-252  Siliconix / Vishay Package Type TO-252  MOSFET Transistors Package Type TO-252  Siliconix / Vishay MOSFET Transistors Package Type TO-252   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 136 W  Siliconix / Vishay Power Dissipation 136 W  MOSFET Transistors Power Dissipation 136 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 136 W   Resistance, Drain to Source On 0.0065 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.0065 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.0065 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0065 Ohm   Resistance, Thermal, Junction to Case 0.85 °C⁄W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.85 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.85 °C⁄W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.85 °C⁄W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 15 °C⁄W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 15 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 15 °C⁄W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 15 °C⁄W   Time, Rise 13 nS  Siliconix / Vishay Time, Rise 13 nS  MOSFET Transistors Time, Rise 13 nS  Siliconix / Vishay MOSFET Transistors Time, Rise 13 nS   Time, Turn-Off Delay 50 ns  Siliconix / Vishay Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 28 ns  Siliconix / Vishay Time, Turn-On Delay 28 ns  MOSFET Transistors Time, Turn-On Delay 28 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 28 ns   Transconductance, Forward 25 S  Siliconix / Vishay Transconductance, Forward 25 S  MOSFET Transistors Transconductance, Forward 25 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 25 S   Typical Gate Charge @ Vgs 94 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 94 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 94 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 94 nC @ 10 V   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  Siliconix / Vishay Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1 V  Siliconix / Vishay Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.245" (6.22mm)  Siliconix / Vishay Width 0.245" (6.22mm)  MOSFET Transistors Width 0.245" (6.22mm)  Siliconix / Vishay MOSFET Transistors Width 0.245" (6.22mm)  
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