amphenol代理商
专业销售Amphenol(安费诺)全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索:    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

SUP40N25-60-E3 - 

MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 0.049Ohm; ID 40A; TO-220AB; PD 300W; VGS +/-30V

Siliconix / Vishay SUP40N25-60-E3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SUP40N25-60-E3
仓库库存编号:
70026024
技术数据表:
View SUP40N25-60-E3 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SUP40N25-60-E3产品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices
  • SUP40N25-60-E3产品信息

      Application  Industrial  
      Brand/Series  SUP Series  
      Capacitance, Input  5000 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  40 A  
      Dimensions  10.51 x 4.65 x 15.49 mm  
      Fall Time  145 nS  
      Gate Charge, Total  95 nC  
      Height  0.61" (15.49mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  300 W  
      Resistance, Drain to Source On  0.163 Ω  
      Resistance, Thermal, Junction to Case  0.5 °C⁄W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  40 °C⁄W  
      Time, Turn-Off Delay  40 ns  
      Time, Turn-On Delay  22 ns  
      Transconductance, Forward  70 S  
      Typical Gate Charge @ Vgs  95 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  250 V  
      Voltage, Drain to Source  250 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.183" (4.65mm)  
    关键词         

    SUP40N25-60-E3相关搜索

    Application Industrial  Siliconix / Vishay Application Industrial  MOSFET Transistors Application Industrial  Siliconix / Vishay MOSFET Transistors Application Industrial   Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Capacitance, Input 5000 pF @ 25 V  Siliconix / Vishay Capacitance, Input 5000 pF @ 25 V  MOSFET Transistors Capacitance, Input 5000 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 5000 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 40 A  Siliconix / Vishay Current, Drain 40 A  MOSFET Transistors Current, Drain 40 A  Siliconix / Vishay MOSFET Transistors Current, Drain 40 A   Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay Dimensions 10.51 x 4.65 x 15.49 mm  MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm   Fall Time 145 nS  Siliconix / Vishay Fall Time 145 nS  MOSFET Transistors Fall Time 145 nS  Siliconix / Vishay MOSFET Transistors Fall Time 145 nS   Gate Charge, Total 95 nC  Siliconix / Vishay Gate Charge, Total 95 nC  MOSFET Transistors Gate Charge, Total 95 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 95 nC   Height 0.61" (15.49mm)  Siliconix / Vishay Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  Siliconix / Vishay MOSFET Transistors Height 0.61" (15.49mm)   Mounting Type Through Hole  Siliconix / Vishay Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Siliconix / Vishay MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 300 W  Siliconix / Vishay Power Dissipation 300 W  MOSFET Transistors Power Dissipation 300 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 300 W   Resistance, Drain to Source On 0.163 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.163 Ω  MOSFET Transistors Resistance, Drain to Source On 0.163 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.163 Ω   Resistance, Thermal, Junction to Case 0.5 °C⁄W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.5 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.5 °C⁄W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.5 °C⁄W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 40 °C⁄W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W   Time, Turn-Off Delay 40 ns  Siliconix / Vishay Time, Turn-Off Delay 40 ns  MOSFET Transistors Time, Turn-Off Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 40 ns   Time, Turn-On Delay 22 ns  Siliconix / Vishay Time, Turn-On Delay 22 ns  MOSFET Transistors Time, Turn-On Delay 22 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 22 ns   Transconductance, Forward 70 S  Siliconix / Vishay Transconductance, Forward 70 S  MOSFET Transistors Transconductance, Forward 70 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 70 S   Typical Gate Charge @ Vgs 95 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 95 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 95 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 95 nC @ 10 V   Voltage, Breakdown, Drain to Source 250 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 250 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V   Voltage, Drain to Source 250 V  Siliconix / Vishay Voltage, Drain to Source 250 V  MOSFET Transistors Voltage, Drain to Source 250 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 250 V   Voltage, Forward, Diode 1 V  Siliconix / Vishay Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±30 V  Siliconix / Vishay Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.183" (4.65mm)  Siliconix / Vishay Width 0.183" (4.65mm)  MOSFET Transistors Width 0.183" (4.65mm)  Siliconix / Vishay MOSFET Transistors Width 0.183" (4.65mm)  
    电话:400-900-3095
    QQ:800152669
    关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
    Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持:电子元器件 ICP备案证书号:粤ICP备11103613号