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Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SUP Series
Channel Type	N
Current, Drain	75 A
Fall Time	95 ns
Gate Charge, Total	250 nC
Operating and Storage Temperature	–55 to +175 °C
Package Type	TO-220AB
Polarization	N-Channel
Power Dissipation	187 W
Resistance, Drain to Source On	0.006 Ohm
Resistance, Thermal, Junction to Case	0.6 °C/W
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	–55 °C
Thermal Resistance, Junction to Ambient	40 °C/W
Time, Rise	40 ns
Time, Turn-Off Delay	190 ns
Time, Turn-On Delay	40 ns
Transconductance, Forward	30 S
Voltage, Breakdown, Drain to Source	30 V
Voltage, Forward, Diode	1.3 V
Voltage, Gate to Source	±20 V
关键词

Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 75 A  Siliconix / Vishay Current, Drain 75 A  MOSFET Transistors Current, Drain 75 A  Siliconix / Vishay MOSFET Transistors Current, Drain 75 A   Fall Time 95 ns  Siliconix / Vishay Fall Time 95 ns  MOSFET Transistors Fall Time 95 ns  Siliconix / Vishay MOSFET Transistors Fall Time 95 ns   Gate Charge, Total 250 nC  Siliconix / Vishay Gate Charge, Total 250 nC  MOSFET Transistors Gate Charge, Total 250 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 250 nC   Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +175 °C  MOSFET Transistors Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 187 W  Siliconix / Vishay Power Dissipation 187 W  MOSFET Transistors Power Dissipation 187 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 187 W   Resistance, Drain to Source On 0.006 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.006 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.006 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.006 Ohm   Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.6 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum –55 °C  Siliconix / Vishay Temperature, Operating, Minimum –55 °C  MOSFET Transistors Temperature, Operating, Minimum –55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum –55 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Rise 40 ns  Siliconix / Vishay Time, Rise 40 ns  MOSFET Transistors Time, Rise 40 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 40 ns   Time, Turn-Off Delay 190 ns  Siliconix / Vishay Time, Turn-Off Delay 190 ns  MOSFET Transistors Time, Turn-Off Delay 190 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 190 ns   Time, Turn-On Delay 40 ns  Siliconix / Vishay Time, Turn-On Delay 40 ns  MOSFET Transistors Time, Turn-On Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 40 ns   Transconductance, Forward 30 S  Siliconix / Vishay Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30 S   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Forward, Diode 1.3 V  Siliconix / Vishay Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V