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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> TP0610K-T1-E3

TP0610K-T1-E3 -

MOSFET; P-Ch; VDSS -60V; RDS(ON) 10 Ohms; ID -185mA; TO-236 (SOT-23); PD 350mW; -55degc

Siliconix / Vishay TP0610K-T1-E3

声明：图片仅供参考，请以实物为准！

Siliconix / Vishay

制造商：: Siliconix / Vishay Siliconix / Vishay
制造商产品编号：: TP0610K-T1-E3
仓库库存编号：: 70026028
技术数据表：: Datasheet

订购热线： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

TP0610K-T1-E3产品概述

Features:

Halogen-Free According to IEC 61249-2-21 Definition

TrenchFET® Power MOSFET: 1.8 V Rated

Ultra Low On-Resistance for Increased Battery Life

New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile

Compliant to RoHS Directive 2002/95/EC

Applications:

Load/Power Switching in Portable Devices

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Amphenol Industrial
connector comp, shell only, metal circular, str plug, solid bkshl, size 14s, black fin

型号：97-3106A-14S(621)(0850)
仓库库存编号：70141214
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TP0610K-T1-E3相关搜索

Brand/Series TP Series Siliconix / Vishay Brand/Series TP Series MOSFET Transistors Brand/Series TP Series Siliconix / Vishay MOSFET Transistors Brand/Series TP Series Channel Mode Enhancement Siliconix / Vishay Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement Channel Type P Siliconix / Vishay Channel Type P MOSFET Transistors Channel Type P Siliconix / Vishay MOSFET Transistors Channel Type P Configuration Single Siliconix / Vishay Configuration Single MOSFET Transistors Configuration Single Siliconix / Vishay MOSFET Transistors Configuration Single Current, Drain -115 mA Siliconix / Vishay Current, Drain -115 mA MOSFET Transistors Current, Drain -115 mA Siliconix / Vishay MOSFET Transistors Current, Drain -115 mA Dimensions 3.04 x 1.4 x 1.02 mm Siliconix / Vishay Dimensions 3.04 x 1.4 x 1.02 mm MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm Siliconix / Vishay MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm Gate Charge, Total 1.7 nC Siliconix / Vishay Gate Charge, Total 1.7 nC MOSFET Transistors Gate Charge, Total 1.7 nC Siliconix / Vishay MOSFET Transistors Gate Charge, Total 1.7 nC Length 0.119" (3.04mm) Siliconix / Vishay Length 0.119" (3.04mm) MOSFET Transistors Length 0.119" (3.04mm) Siliconix / Vishay MOSFET Transistors Length 0.119" (3.04mm) Mounting Type Surface Mount Siliconix / Vishay Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 1 Siliconix / Vishay Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 Siliconix / Vishay Number of Pins 3 MOSFET Transistors Number of Pins 3 Siliconix / Vishay MOSFET Transistors Number of Pins 3 Package Type TO-236 Siliconix / Vishay Package Type TO-236 MOSFET Transistors Package Type TO-236 Siliconix / Vishay MOSFET Transistors Package Type TO-236 Polarization P-Channel Siliconix / Vishay Polarization P-Channel MOSFET Transistors Polarization P-Channel Siliconix / Vishay MOSFET Transistors Polarization P-Channel Power Dissipation 350 W Siliconix / Vishay Power Dissipation 350 W MOSFET Transistors Power Dissipation 350 W Siliconix / Vishay MOSFET Transistors Power Dissipation 350 W Temperature, Operating, Maximum +150 °C Siliconix / Vishay Temperature, Operating, Maximum +150 °C MOSFET Transistors Temperature, Operating, Maximum +150 °C Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C Temperature, Operating, Minimum -55 °C Siliconix / Vishay Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C Time, Turn-On Delay 20 ns Siliconix / Vishay Time, Turn-On Delay 20 ns MOSFET Transistors Time, Turn-On Delay 20 ns Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 20 ns Transconductance, Forward 80 S Siliconix / Vishay Transconductance, Forward 80 S MOSFET Transistors Transconductance, Forward 80 S Siliconix / Vishay MOSFET Transistors Transconductance, Forward 80 S Typical Gate Charge @ Vgs 1.7 nC @ -15 V Siliconix / Vishay Typical Gate Charge @ Vgs 1.7 nC @ -15 V MOSFET Transistors Typical Gate Charge @ Vgs 1.7 nC @ -15 V Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 1.7 nC @ -15 V Voltage, Breakdown, Drain to Source -60 V Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V Voltage, Drain to Source -60 V Siliconix / Vishay Voltage, Drain to Source -60 V MOSFET Transistors Voltage, Drain to Source -60 V Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V Voltage, Forward, Diode -1.4 V Siliconix / Vishay Voltage, Forward, Diode -1.4 V MOSFET Transistors Voltage, Forward, Diode -1.4 V Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.4 V Voltage, Gate to Source ±20 V Siliconix / Vishay Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V

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