V20120C-E3/4W产品概述
Features:
Trench MOS Schottky Technology
Low Forward Voltage Drop, Low Power Losses
High Efficiency Operation
Solder Bath Temperature 275°C Max. 10 s, Per JESD 22-B106
Compliant to RoHS Directive 2011/65/EU
Halogen-Free According to IEC 61249-2-21 Definition
Applications:
For Use in Solar Cell Junction Box as a Bypass Diode for Protection, Using DC Forward Current without Reverse Bias
Datasheet
