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IGBT Module Transistors

Brand/Series	IGBT Series
Capacitance, Gate	26 nF
Channel Type	N
Configuration	Dual
Current, Collector	565 A
Current, Continuous Collector	616 A
Dimensions	106.4 x 61.4 x 30.5 mm
Energy Rating	63 mJ
Fall Time	60 ns
Height	1.201" (30.5mm)
Length	4.188" (106.4mm)
Mounting Type	Screw
Number of Pins	7
Operating and Storage Temperature	-40 to 150°C (Operating), -40 to 125°C (Storage)
Package Type	Semitrans3
Polarity	N-Channel
Primary Type	Si
Resistance, Thermal, Junction to Case	0.055 K/W
Speed, Switching	12 kHz
Switching Loss	32 mJ
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +175 °C
Time, Rise	60 ns
Transistor Type	IGBT
Type	SPT
Voltage, Breakdown, Collector to Emitter	1200 V
Voltage, Collector to Emitter	1200 V
Voltage, Collector to Emitter Shorted	1200 V
Voltage, Gate Threshold, Range	5.5 V
Voltage, Gate to Emitter	20 V
Voltage, Saturation, Collector to Emitter	1200 V
Width	2.417" (61.4mm)
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• Amphenol Industrial
  connector comp, shell only, metal circular, cable recept, solid bkshl, size 18, olive
  
  型号：97-3101A-18(0850)
  仓库库存编号：70141281
  
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Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 26 nF  SEMIKRON Capacitance, Gate 26 nF  IGBT Transistor Modules Capacitance, Gate 26 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 26 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 565 A  SEMIKRON Current, Collector 565 A  IGBT Transistor Modules Current, Collector 565 A  SEMIKRON IGBT Transistor Modules Current, Collector 565 A   Current, Continuous Collector 616 A  SEMIKRON Current, Continuous Collector 616 A  IGBT Transistor Modules Current, Continuous Collector 616 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 616 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 63 mJ  SEMIKRON Energy Rating 63 mJ  IGBT Transistor Modules Energy Rating 63 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 63 mJ   Fall Time 60 ns  SEMIKRON Fall Time 60 ns  IGBT Transistor Modules Fall Time 60 ns  SEMIKRON IGBT Transistor Modules Fall Time 60 ns   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  SEMIKRON Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  SEMIKRON IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)   Package Type Semitrans3  SEMIKRON Package Type Semitrans3  IGBT Transistor Modules Package Type Semitrans3  SEMIKRON IGBT Transistor Modules Package Type Semitrans3   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.055 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.055 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.055 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.055 K/W   Speed, Switching 12 kHz  SEMIKRON Speed, Switching 12 kHz  IGBT Transistor Modules Speed, Switching 12 kHz  SEMIKRON IGBT Transistor Modules Speed, Switching 12 kHz   Switching Loss 32 mJ  SEMIKRON Switching Loss 32 mJ  IGBT Transistor Modules Switching Loss 32 mJ  SEMIKRON IGBT Transistor Modules Switching Loss 32 mJ   Temperature, Operating, Maximum +175 °C  SEMIKRON Temperature, Operating, Maximum +175 °C  IGBT Transistor Modules Temperature, Operating, Maximum +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +175 °C  SEMIKRON Temperature, Operating, Range -40 to +175 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C   Time, Rise 60 ns  SEMIKRON Time, Rise 60 ns  IGBT Transistor Modules Time, Rise 60 ns  SEMIKRON IGBT Transistor Modules Time, Rise 60 ns   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type SPT  SEMIKRON Type SPT  IGBT Transistor Modules Type SPT  SEMIKRON IGBT Transistor Modules Type SPT   Voltage, Breakdown, Collector to Emitter 1200 V  SEMIKRON Voltage, Breakdown, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200 V   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate Threshold, Range 5.5 V  SEMIKRON Voltage, Gate Threshold, Range 5.5 V  IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V  SEMIKRON IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V   Voltage, Gate to Emitter 20 V  SEMIKRON Voltage, Gate to Emitter 20 V  IGBT Transistor Modules Voltage, Gate to Emitter 20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter 20 V   Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON Voltage, Saturation, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)