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NTE2321 - 

QUAD TRANSISTOR NPN SILICON 60V IC=0.5A14-LEAD DIP

NTE Electronics, Inc. NTE2321
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2321
仓库库存编号：
70214890
技术数据表：
View NTE2321 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2321产品概述

Silicon NPN Transistors

NTE2321产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  500 mA  
  Current, Continuous Collector  500 mA  
  Current, Gain  30  
  Device Dissipation  0.65 W  
  Dimensions  19.95 x 7.62 x 5.08 mm  
  Frequency, Operating  350 MHz  
  Gain, DC Current, Minimum  30  
  Height  0.2" (5.08mm)  
  Length  0.785" (19.95mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  14  
  Package Type  DIP-14  
  Polarity  NPN  
  Power Dissipation  1.9 W  
  Primary Type  Si  
  Temperature Range, Junction, Operating  -65 to +200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  General Purpose, Quad  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  30 V  
  Voltage, Collector to Emitter, Saturation  1.6 V  
  Voltage, Emitter to Base  5 V  
  Width  0.3" (7.62mm)  
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Electronics, Inc. Bipolar Transistors Package Type DIP-14   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 1.9 W  NTE Electronics, Inc. Power Dissipation 1.9 W  Bipolar Transistors Power Dissipation 1.9 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 1.9 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, 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Electronics, Inc. Type General Purpose, Quad  Bipolar Transistors Type General Purpose, Quad  NTE Electronics, Inc. Bipolar Transistors Type General Purpose, Quad   Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 60 V  NTE Electronics, Inc. Voltage, Collector to Base 60 V  Bipolar Transistors Voltage, Collector to Base 60 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 60 V   Voltage, Collector to Emitter 30 V  NTE Electronics, Inc. Voltage, Collector to Emitter 30 V  Bipolar Transistors Voltage, Collector to Emitter 30 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 30 V   Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.3" (7.62mm)  NTE Electronics, Inc. Width 0.3" (7.62mm)  Bipolar Transistors Width 0.3" (7.62mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.3" (7.62mm)  
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