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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> SI1553DL-T1-E3

SI1553DL-T1-E3 -

MOSFET; COMPLIMENTARY 2.5V (G-S) Trench

Siliconix / Vishay SI1553DL-T1-E3

声明：图片仅供参考，请以实物为准！

Siliconix / Vishay

制造商：: Siliconix / Vishay Siliconix / Vishay
制造商产品编号：: SI1553DL-T1-E3
仓库库存编号：: 70026189
技术数据表：: Datasheet

订购热线： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

美国1号仓库 仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货

型号	制造商	描述	实时库存	起订量	实时单价 (含税)	货期 (工作日)	操作
SI1553DL-T1-E3 库存编号:SI1553DL-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 0.66A SC70-6	0 1起订	1+	￥6.36	6-10天询价	询价查看资料
SI1553DL-T1-E3 库存编号:SI1553DL-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 0.66A SC70-6	0 1起订			6-10天询价	询价查看资料
SI1553DL-T1-E3 库存编号:SI1553DL-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 0.66A SC70-6	0 1起订			6-10天询价	询价查看资料

英国8号仓库 仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货

型号	制造商	描述	实时库存	起订量	实时单价 (含税)	货期 (工作日)	操作
SI1553DL-T1-E3	Vishay Intertechnologies	660 MA, 20 V, 2 CHANNEL, N AND P-CHANNEL, SI, SMALL SIGNAL, MOSFET	2395 1起订	1+ 168+ 668+	￥10.98 ￥5.49 ￥4.39	1-3周购买	购买 ,"cvcgetWeb":["c3JjPTI0JlBOPQ=="],"cvcModel":["SI1553DL-T1-E3"],"cvcBrand":[" Vishay Intertechnologies "],"cvcNumberAll":["1,168,668,"],"cvcPriceAll":["10.98,5.49,4.39,"],"maxnum":["2395"],"minnum":["1"],"mytime":["1-3周"],"haveiscanbuy":["yes"],

SI1553DL-T1-E3产品概述

Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

SI1553DL-T1-E3相关搜索

Brand/Series SI15 Series Siliconix / Vishay Brand/Series SI15 Series MOSFET Transistors Brand/Series SI15 Series Siliconix / Vishay MOSFET Transistors Brand/Series SI15 Series Channel Mode Enhancement Siliconix / Vishay Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement Channel Type N, P Siliconix / Vishay Channel Type N, P MOSFET Transistors Channel Type N, P Siliconix / Vishay MOSFET Transistors Channel Type N, P Configuration Single Siliconix / Vishay Configuration Single MOSFET Transistors Configuration Single Siliconix / Vishay MOSFET Transistors Configuration Single Current, Drain ±0.41 (P), ±0.66 (N) A Siliconix / Vishay Current, Drain ±0.41 (P), ±0.66 (N) A MOSFET Transistors Current, Drain ±0.41 (P), ±0.66 (N) A Siliconix / Vishay MOSFET Transistors Current, Drain ±0.41 (P), ±0.66 (N) A Mounting Type Surface Mount Siliconix / Vishay Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 2 Siliconix / Vishay Number of Elements per Chip 2 MOSFET Transistors Number of Elements per Chip 2 Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2 Number of Pins 6 Siliconix / Vishay Number of Pins 6 MOSFET Transistors Number of Pins 6 Siliconix / Vishay MOSFET Transistors Number of Pins 6 Package Type SOT-363 Siliconix / Vishay Package Type SOT-363 MOSFET Transistors Package Type SOT-363 Siliconix / Vishay MOSFET Transistors Package Type SOT-363 Power Dissipation 0.27 W Siliconix / Vishay Power Dissipation 0.27 W MOSFET Transistors Power Dissipation 0.27 W Siliconix / Vishay MOSFET Transistors Power Dissipation 0.27 W Resistance, Drain to Source On 0.63 (N), 1.8 (P) Ω Siliconix / Vishay Resistance, Drain to Source On 0.63 (N), 1.8 (P) Ω MOSFET Transistors Resistance, Drain to Source On 0.63 (N), 1.8 (P) Ω Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.63 (N), 1.8 (P) Ω Temperature, Operating, Maximum +150 °C Siliconix / Vishay Temperature, Operating, Maximum +150 °C MOSFET Transistors Temperature, Operating, Maximum +150 °C Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C Temperature, Operating, Minimum -55 °C Siliconix / Vishay Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +150 °C Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C MOSFET Transistors Temperature, Operating, Range -55 to +150 °C Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C Time, Turn-Off Delay 10 (N), 8.5 (P) ns Siliconix / Vishay Time, Turn-Off Delay 10 (N), 8.5 (P) ns MOSFET Transistors Time, Turn-Off Delay 10 (N), 8.5 (P) ns Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 10 (N), 8.5 (P) ns Time, Turn-On Delay 10 (N), 7.5 (P) ns Siliconix / Vishay Time, Turn-On Delay 10 (N), 7.5 (P) ns MOSFET Transistors Time, Turn-On Delay 10 (N), 7.5 (P) ns Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10 (N), 7.5 (P) ns Transconductance, Forward 0.8 (P), 1.5 (N) S Siliconix / Vishay Transconductance, Forward 0.8 (P), 1.5 (N) S MOSFET Transistors Transconductance, Forward 0.8 (P), 1.5 (N) S Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.8 (P), 1.5 (N) S Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.2 nC @ 4.5 V (P-Channel) Siliconix / Vishay Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.2 nC @ 4.5 V (P-Channel) MOSFET Transistors Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.2 nC @ 4.5 V (P-Channel) Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.2 nC @ 4.5 V (P-Channel) Voltage, Drain to Source -20 (P), 20 (N) V Siliconix / Vishay Voltage, Drain to Source -20 (P), 20 (N) V MOSFET Transistors Voltage, Drain to Source -20 (P), 20 (N) V Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 (P), 20 (N) V Voltage, Forward, Diode -1.2 (P), 1.2 (N) V Siliconix / Vishay Voltage, Forward, Diode -1.2 (P), 1.2 (N) V MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V Voltage, Gate to Source ±12 V Siliconix / Vishay Voltage, Gate to Source ±12 V MOSFET Transistors Voltage, Gate to Source ±12 V Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V

参考价格及参考库存

美国2号仓库 仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货

型号

制造商

描述

操作

SI1553DL-T1-E3
[更多]

Vishay Intertechnologies

MOSFET 20V 0.7/0.44

RoHS: Compliant

SI1553DL-T1
[更多]

Vishay Intertechnologies

MOSFET 20V 0.7/0.44

RoHS: Not compliant

英国2号仓库 仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货

型号

制造商

描述

操作

SI1553DL-T1-E3
[更多]

Vishay Siliconix

MOSFET, COMPLIMENTARY 2.5V (G-S) Trench

RoHS: Compliant

搜索
查看资料

SI1553DL-T1-E3/BKN
[更多]

Vishay Siliconix

MOSFET, COMPLIMENTARY 2.5V (G-S) Trench

RoHS: Compliant

搜索
查看资料

英国8号仓库 仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货

型号

制造商

描述

操作

SI1553DL-T1-E3
[更多]

Vishay Siliconix

660 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

SI1553DL-T1-E3
[更多]

Vishay Semiconductors

660 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

美国1号仓库 查看更多相关产品

参考图片	制造商 / 描述 / 型号 / 仓库库存编号 / 别名	PDF	操作
	Vishay Siliconix MOSFET N/P-CH 20V SC70-6 详细描述：Mosfet Array N and P-Channel 20V 660mA, 410mA 270mW Surface Mount SC-70-6 (SOT-363) 型号：SI1553DL-T1-E3 仓库库存编号：SI1553DL-T1-E3CT-ND 别名：SI1553DL-T1-E3CT <br>	无铅	搜索

英国2号仓库 查看更多相关产品

参考图片	制造商 / 说明 / 型号 / 仓库库存编号	PDF	操作
	Siliconix / Vishay MOSFET; COMPLIMENTARY 2.5V (G-S) Trench 型号：SI1553DL-T1-E3 仓库库存编号：70026189		搜索

www.szcwdz.com 查看更多相关产品

参考图片	型号/品牌	描述 / 技术参考	操作
	SI1553DL-T1-E3 VISHAY	N & P 沟道 20 V 0.385/0.995 Ohms 表面贴装功率Mosfet - SOT-363	查价格库存查看详细

www.szcwdz.com.cn 查看更多相关产品

参考图片	型号/品牌	描述 / 技术参考	操作
	SI1553DL-T1-E3 Vishay Siliconix	MOSFET N/P-CH 20V SC70-6	查价格库存查看详细

www.szcwdz.cn 查看更多相关产品

参考图片	型号/品牌	描述 / 技术参考	操作
	SI1553DL-T1-E3 VISHAY	N & P 沟道 20 V 0.385/0.995 Ohms 表面贴装功率Mosfet - SOT-363	查价格库存查看详细
	SI1553DL-T1-E3 Vishay Siliconix	MOSFET N/P-CH 20V SC70-6	查价格库存查看详细

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