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N-Channel Power MOSFET, PowerPAK SO-8 Package, 1.9 W

Application	Primary side switch for high density DC?DC, telecom?server 48-V DC?DC, industrial and 42-V automotive
Brand/Series	SI78 Series
Channel Type	N-Channel
Current, Drain	4 A
Fall Time	10 ns (Typ.)
Gate Charge, Total	30 nC
Operating and Storage Temperature	-55 to 150 °C
Package Type	PowerPAK SO-8
Polarization	N-Channel
Power Dissipation	1.9 W
Resistance, Drain to Source On	0.041 Ohm
Resistance, Thermal, Junction to Case	1.5 °C?W (Typ.)
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Thermal Resistance, Junction to Ambient	52 °C⁄W
Time, Rise	7 ns (Typ.)
Time, Turn-Off Delay	22 ns
Time, Turn-On Delay	12 ns
Transconductance, Forward	18 S
Voltage, Breakdown, Drain to Source	150 V
Voltage, Forward, Diode	0.75 V
Voltage, Gate to Source	±20 V
关键词

Application Primary side switch for high density DC?DC, telecom?server 48-V DC?DC, industrial and 42-V automotive  Siliconix / Vishay Application Primary side switch for high density DC?DC, telecom?server 48-V DC?DC, industrial and 42-V automotive  MOSFET Transistors Application Primary side switch for high density DC?DC, telecom?server 48-V DC?DC, industrial and 42-V automotive  Siliconix / Vishay MOSFET Transistors Application Primary side switch for high density DC?DC, telecom?server 48-V DC?DC, industrial and 42-V automotive   Brand/Series SI78 Series  Siliconix / Vishay Brand/Series SI78 Series  MOSFET Transistors Brand/Series SI78 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI78 Series   Channel Type N-Channel  Siliconix / Vishay Channel Type N-Channel  MOSFET Transistors Channel Type N-Channel  Siliconix / Vishay MOSFET Transistors Channel Type N-Channel   Current, Drain 4 A  Siliconix / Vishay Current, Drain 4 A  MOSFET Transistors Current, Drain 4 A  Siliconix / Vishay MOSFET Transistors Current, Drain 4 A   Fall Time 10 ns (Typ.)  Siliconix / Vishay Fall Time 10 ns (Typ.)  MOSFET Transistors Fall Time 10 ns (Typ.)  Siliconix / Vishay MOSFET Transistors Fall Time 10 ns (Typ.)   Gate Charge, Total 30 nC  Siliconix / Vishay Gate Charge, Total 30 nC  MOSFET Transistors Gate Charge, Total 30 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 30 nC   Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type PowerPAK SO-8  Siliconix / Vishay Package Type PowerPAK SO-8  MOSFET Transistors Package Type PowerPAK SO-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.9 W  Siliconix / Vishay Power Dissipation 1.9 W  MOSFET Transistors Power Dissipation 1.9 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.9 W   Resistance, Drain to Source On 0.041 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.041 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.041 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.041 Ohm   Resistance, Thermal, Junction to Case 1.5 °C?W (Typ.)  Siliconix / Vishay Resistance, Thermal, Junction to Case 1.5 °C?W (Typ.)  MOSFET Transistors Resistance, Thermal, Junction to Case 1.5 °C?W (Typ.)  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 1.5 °C?W (Typ.)   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Thermal Resistance, Junction to Ambient 52 °C⁄W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 52 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 52 °C⁄W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 52 °C⁄W   Time, Rise 7 ns (Typ.)  Siliconix / Vishay Time, Rise 7 ns (Typ.)  MOSFET Transistors Time, Rise 7 ns (Typ.)  Siliconix / Vishay MOSFET Transistors Time, Rise 7 ns (Typ.)   Time, Turn-Off Delay 22 ns  Siliconix / Vishay Time, Turn-Off Delay 22 ns  MOSFET Transistors Time, Turn-Off Delay 22 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 22 ns   Time, Turn-On Delay 12 ns  Siliconix / Vishay Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 18 S  Siliconix / Vishay Transconductance, Forward 18 S  MOSFET Transistors Transconductance, Forward 18 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 18 S   Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 150 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V   Voltage, Forward, Diode 0.75 V  Siliconix / Vishay Voltage, Forward, Diode 0.75 V  MOSFET Transistors Voltage, Forward, Diode 0.75 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.75 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V