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Features:

TrenchFET® Power MOSFET

Applications:

DC/DC Primary Switch

Automotive — 12 V Boardnet — High-Side Switches — Motor Drives

Brand/Series	SUP Series
Channel Type	P
Current, Drain	-90 A
Fall Time	450 ns
Operating and Storage Temperature	-55 to +175 °C
Package Type	TO-220AB
Polarization	P-Channel
Power Dissipation	250 W
Resistance, Drain to Source On	0.0118 Ohm
Resistance, Thermal, Junction to Case	0.6 °C/W
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Thermal Resistance, Junction to Ambient	62 °C/W
Time, Rise	285 ns
Time, Turn-Off Delay	210 ns
Time, Turn-On Delay	30 ns
Transconductance, Forward	20 S
Voltage, Breakdown, Drain to Source	-60 V
Voltage, Drain to Source	-60 V
Voltage, Forward, Diode	-1.5 V
Voltage, Gate to Source	±20 V
关键词

Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Current, Drain -90 A  Siliconix / Vishay Current, Drain -90 A  MOSFET Transistors Current, Drain -90 A  Siliconix / Vishay MOSFET Transistors Current, Drain -90 A   Fall Time 450 ns  Siliconix / Vishay Fall Time 450 ns  MOSFET Transistors Fall Time 450 ns  Siliconix / Vishay MOSFET Transistors Fall Time 450 ns   Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 250 W  Siliconix / Vishay Power Dissipation 250 W  MOSFET Transistors Power Dissipation 250 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 W   Resistance, Drain to Source On 0.0118 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.0118 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.0118 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0118 Ohm   Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.6 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Thermal Resistance, Junction to Ambient 62 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 62 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W   Time, Rise 285 ns  Siliconix / Vishay Time, Rise 285 ns  MOSFET Transistors Time, Rise 285 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 285 ns   Time, Turn-Off Delay 210 ns  Siliconix / Vishay Time, Turn-Off Delay 210 ns  MOSFET Transistors Time, Turn-Off Delay 210 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 210 ns   Time, Turn-On Delay 30 ns  Siliconix / Vishay Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Siliconix / Vishay Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -1.5 V  Siliconix / Vishay Voltage, Forward, Diode -1.5 V  MOSFET Transistors Voltage, Forward, Diode -1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V